Addition of the Lewis Acid Zn(C6F5)2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm2/Vs
dc.contributor.author | Paterson, Alexandra | |
dc.contributor.author | Tsetseris, Leonidas | |
dc.contributor.author | Li, Ruipeng | |
dc.contributor.author | Basu, Aniruddha | |
dc.contributor.author | Faber, Hendrik | |
dc.contributor.author | Emwas, Abdul-Hamid M. | |
dc.contributor.author | Panidi, Julianna | |
dc.contributor.author | Fei, Zhuping | |
dc.contributor.author | Niazi, Muhammad Rizwan | |
dc.contributor.author | Anjum, Dalaver H. | |
dc.contributor.author | Heeney, Martin | |
dc.contributor.author | Anthopoulos, Thomas D. | |
dc.date.accessioned | 2019-05-13T11:14:30Z | |
dc.date.available | 2019-05-13T11:14:30Z | |
dc.date.issued | 2019-05-10 | |
dc.identifier.citation | Paterson AF, Tsetseris L, Li R, Basu A, Faber H, et al. (2019) Addition of the Lewis Acid Zn(C6F5)2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm2/Vs. Advanced Materials: 1900871. Available: http://dx.doi.org/10.1002/adma.201900871. | |
dc.identifier.issn | 0935-9648 | |
dc.identifier.issn | 1521-4095 | |
dc.identifier.doi | 10.1002/adma.201900871 | |
dc.identifier.uri | http://hdl.handle.net/10754/652831 | |
dc.description.abstract | Incorporating the molecular organic Lewis acid tris(pentafluorophenyl)borane [B(C6 F5 )3 ] into organic semiconductors has shown remarkable promise in recent years for controlling the operating characteristics and performance of various opto/electronic devices, including, light-emitting diodes, solar cells, and organic thin-film transistors (OTFTs). Despite the demonstrated potential, however, to date most of the work has been limited to B(C6 F5 )3 with the latter serving as the prototypical air-stable molecular Lewis acid system. Herein, the use of bis(pentafluorophenyl)zinc [Zn(C6 F5 )2 ] is reported as an alternative Lewis acid additive in high-hole-mobility OTFTs based on small-molecule:polymer blends comprising 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene and indacenodithiophene-benzothiadiazole. Systematic analysis of the materials and device characteristics supports the hypothesis that Zn(C6 F5 )2 acts simultaneously as a p-dopant and a microstructure modifier. It is proposed that it is the combination of these synergistic effects that leads to OTFTs with a maximum hole mobility value of 21.5 cm2 V-1 s-1 . The work not only highlights Zn(C6 F5 )2 as a promising new additive for next-generation optoelectronic devices, but also opens up new avenues in the search for high-mobility organic semiconductors. | |
dc.description.sponsorship | T.D.A., A.F.P., A.B., H.F., and M.R.N. acknowledge the King Abdullah University of Science and Technology (KAUST) for financial support. R.L. used CMS beamline of the National Synchrotron Light Source II, a U.S. Department of Energy (DOE) Office of Science User Facility operated for the DOE Office of Science by Brookhaven National Laboratory under contract No. DE-SC0012704. L.T. acknowledges support for the computational time granted from GRNET in the National HPC facility—ARIS—under project STEM. M.H. and J.P. thank EPRSC (EP/L016702/1) and the Royal Society for their support. | |
dc.publisher | Wiley | |
dc.relation.url | https://onlinelibrary.wiley.com/doi/full/10.1002/adma.201900871 | |
dc.rights | Archived with thanks to Advanced Materials | |
dc.subject | Organic Semiconductors | |
dc.subject | Lewis Acid | |
dc.subject | Organic Thin-film Transistors | |
dc.subject | Carrier Mobility | |
dc.subject | Molecular Doping | |
dc.title | Addition of the Lewis Acid Zn(C6F5)2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm2/Vs | |
dc.type | Article | |
dc.contributor.department | Electron Microscopy | |
dc.contributor.department | KAUST Solar Center (KSC) | |
dc.contributor.department | Material Science and Engineering Program | |
dc.contributor.department | NMR | |
dc.contributor.department | Physical Science and Engineering (PSE) Division | |
dc.identifier.journal | Advanced Materials | |
dc.eprint.version | Post-print | |
dc.contributor.institution | Department of PhysicsNational Technical University of Athens Athens GR-15780 Greece | |
dc.contributor.institution | Brookhaven National Lab Upton NY 11973 USA | |
dc.contributor.institution | Department of Chemistry and Centre for Plastic ElectronicsImperial College London South Kensington SW7 2AZ London UK | |
kaust.person | Paterson, Alexandra | |
kaust.person | Basu, Aniruddha | |
kaust.person | Faber, Hendrik | |
kaust.person | Emwas, Abdul-Hamid M. | |
kaust.person | Niazi, Muhammad Rizwan | |
kaust.person | Anjum, Dalaver H. | |
kaust.person | Anthopoulos, Thomas D. | |
refterms.dateFOA | 2020-05-10T00:00:00Z |
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