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dc.contributor.authorPaterson, Alexandra F.
dc.contributor.authorTsetseris, Leonidas
dc.contributor.authorLi, Ruipeng
dc.contributor.authorBasu, Aniruddha
dc.contributor.authorFaber, Hendrik
dc.contributor.authorEmwas, Abdul-Hamid
dc.contributor.authorPanidi, Julianna
dc.contributor.authorFei, Zhuping
dc.contributor.authorNiazi, Muhammad Rizwan
dc.contributor.authorAnjum, Dalaver H.
dc.contributor.authorHeeney, Martin
dc.contributor.authorAnthopoulos, Thomas D.
dc.date.accessioned2019-05-13T11:14:30Z
dc.date.available2019-05-13T11:14:30Z
dc.date.issued2019-05-10
dc.identifier.citationPaterson AF, Tsetseris L, Li R, Basu A, Faber H, et al. (2019) Addition of the Lewis Acid Zn(C6F5)2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm2/Vs. Advanced Materials: 1900871. Available: http://dx.doi.org/10.1002/adma.201900871.
dc.identifier.issn0935-9648
dc.identifier.issn1521-4095
dc.identifier.doi10.1002/adma.201900871
dc.identifier.urihttp://hdl.handle.net/10754/652831
dc.description.abstractIncorporating the molecular organic Lewis acid tris(pentafluorophenyl)borane [B(C6 F5 )3 ] into organic semiconductors has shown remarkable promise in recent years for controlling the operating characteristics and performance of various opto/electronic devices, including, light-emitting diodes, solar cells, and organic thin-film transistors (OTFTs). Despite the demonstrated potential, however, to date most of the work has been limited to B(C6 F5 )3 with the latter serving as the prototypical air-stable molecular Lewis acid system. Herein, the use of bis(pentafluorophenyl)zinc [Zn(C6 F5 )2 ] is reported as an alternative Lewis acid additive in high-hole-mobility OTFTs based on small-molecule:polymer blends comprising 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene and indacenodithiophene-benzothiadiazole. Systematic analysis of the materials and device characteristics supports the hypothesis that Zn(C6 F5 )2 acts simultaneously as a p-dopant and a microstructure modifier. It is proposed that it is the combination of these synergistic effects that leads to OTFTs with a maximum hole mobility value of 21.5 cm2 V-1 s-1 . The work not only highlights Zn(C6 F5 )2 as a promising new additive for next-generation optoelectronic devices, but also opens up new avenues in the search for high-mobility organic semiconductors.
dc.description.sponsorshipT.D.A., A.F.P., A.B., H.F., and M.R.N. acknowledge the King Abdullah University of Science and Technology (KAUST) for financial support. R.L. used CMS beamline of the National Synchrotron Light Source II, a U.S. Department of Energy (DOE) Office of Science User Facility operated for the DOE Office of Science by Brookhaven National Laboratory under contract No. DE-SC0012704. L.T. acknowledges support for the computational time granted from GRNET in the National HPC facility—ARIS—under project STEM. M.H. and J.P. thank EPRSC (EP/L016702/1) and the Royal Society for their support.
dc.publisherWiley
dc.relation.urlhttps://onlinelibrary.wiley.com/doi/full/10.1002/adma.201900871
dc.rightsArchived with thanks to Advanced Materials
dc.subjectOrganic Semiconductors
dc.subjectLewis Acid
dc.subjectOrganic Thin-film Transistors
dc.subjectCarrier Mobility
dc.subjectMolecular Doping
dc.titleAddition of the Lewis Acid Zn(C6F5)2 Enables Organic Transistors with a Maximum Hole Mobility in Excess of 20 cm2/Vs
dc.typeArticle
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.contributor.departmentMaterials Science and Engineering Program
dc.contributor.departmentCore LabsKing Abdullah University of Science and Technology Thuwal 23955-6900 Saudi Arabia
dc.identifier.journalAdvanced Materials
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of PhysicsNational Technical University of Athens Athens GR-15780 Greece
dc.contributor.institutionBrookhaven National Lab Upton NY 11973 USA
dc.contributor.institutionDepartment of Chemistry and Centre for Plastic ElectronicsImperial College London South Kensington SW7 2AZ London UK
kaust.personPaterson, Alexandra F.
kaust.personBasu, Aniruddha
kaust.personFaber, Hendrik
kaust.personEmwas, Abdul-Hamid
kaust.personNiazi, Muhammad Rizwan
kaust.personAnjum, Dalaver H.
kaust.personAnthopoulos, Thomas D.


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