Light-Emitting Transistors Based on Solution-Processed Heterostructures of Self-Organized Multiple-Quantum-Well Perovskite and Metal-Oxide Semiconductors
AuthorsChaudhry, Mujeeb Ullah
Petty, Michael C.
Anthopoulos, Thomas D.
KAUST DepartmentKAUST Solar Center (KSC)
Material Science and Engineering Program
Office of the VP
Physical Science and Engineering (PSE) Division
Vice President for ResearchPO Box 2000King Abdullah University of Science and Technology (KAUST) Thuwal 23955-6900 Saudi Arabia
Permanent link to this recordhttp://hdl.handle.net/10754/652818
MetadataShow full item record
AbstractSolution-processed hybrid organic–inorganic perovskite semiconductors have demonstrated remarkable performance for both photovoltaic and light-emitting-diode applications in recent years, launching a new field of condensed matter physics. However, their use in other emerging optoelectronic applications, such as light-emitting field-effect transistors (LEFETs) has been surprisingly limited, wth only a few low-performance devices reported. The development of hybrid LEFETs consisting of a solution-processed self-organized multiple-quantum-well lead iodide perovskite layer grown onto an electron-transporting In2O3/ZnO heterojunction channel is reported. The multilayer transistors offer bifunctional characteristics, namely, transistor function with high electron mobility (>20 cm2 V−1 s−1) and a large current on/off ratio (>106), combined with near infrared light emission (λmax = 783 nm) and a promising external quantum efficiency (≈0.2% at 18 cd m−2). A further interesting feature of these hybrid LEFETs, in comparison to previously reported structures, is their highly uniform and stable emission characteristics, which make them attractive for smart-pixel-format display applications.
CitationChaudhry MU, Wang N, Tetzner K, Seitkhan A, Miao Y, et al. (2019) Light-Emitting Transistors Based on Solution-Processed Heterostructures of Self-Organized Multiple-Quantum-Well Perovskite and Metal-Oxide Semiconductors. Advanced Electronic Materials: 1800985. Available: http://dx.doi.org/10.1002/aelm.201800985.
SponsorsM.U.C. thanks Durham University and the European Union for a COFUND (no. 609412) Durham Junior Research Fellowship. K.T. and T.D.A. acknowledge financial support from the European Union Horizon 2020 Marie Curie Action: Flexible Complementary Hybrid Integrated Circuits (FlexCHIC, no. 658563). D.D.C.B. acknowledges the University of Oxford, a Jiangsu Province “Double Creation” Team award, and the Jiangsu Industrial Technology Research Institute for funding. N.W., Y.M., Y.S., and J.W. acknowledge support from the Major Research Plan of the National Natural Science Foundation of China (no. 91733302), the National Basic Research Program of China (Fundamental Studies of Perovskite Solar Cells, no. 2015CB932200), the China–European Union Joint Research Program (no. 2016YFE0112000), the Jiangsu Natural Science Foundation (nos. BK20150043 and BK20180085), the National Natural Science Foundation of China (nos. 11474164, 61875084, and 61634001), the National Science Fund for Distinguished Young Scholars (no. 61725502), and the Jiangsu National Synergetic Innovation Center for Organic Electronics and Information Displays.
JournalAdvanced Electronic Materials