Dual-Function Electron-Conductive, Hole-Blocking Titanium Nitride Contacts for Efficient Silicon Solar Cells
de Bastiani, Michele
De Wolf, Stefaan
KAUST DepartmentKAUST Catalysis Center (KCC)
KAUST Solar Center (KSC)
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
KAUST Grant NumberOSR-CRG URF/1/3383
Online Publication Date2019-04-16
Print Publication Date2019-05
Permanent link to this recordhttp://hdl.handle.net/10754/631972
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AbstractHigh-performance passivating contact is a prerequisite for high-efficiency crystalline silicon (c-Si) solar cells. In this work, an electron-conductive, hole-blocking contact based on titanium nitride (TiN) deposited by reactive magnetron sputtering is presented. Quasi-metallic TiN combined with an ultrathin SiO2 passivation layer (SiO2/TiN) is demonstrated to be an effective electron-selective contact on c-Si, featuring a low-contact resistivity of 16.4 mΩ.cm2 and a tolerable recombination current parameter of ∼500 fA/cm2. By implementing the dual-function SiO2/TiN contact, which acts simultaneously as a surface passivating layer and metal electrode, an efficiency of 20% is achieved by an n-type c-Si solar cell with a simple structure. This work not only demonstrates a way to develop efficient n-type c-Si solar cells with dual-function metal nitride contacts at a low cost but also expands the pool of available carrier transport materials, from metal oxides to metal nitrides, for photovoltaic devices.
CitationYang X, Liu W, De Bastiani M, Allen T, Kang J, et al. (2019) Dual-Function Electron-Conductive, Hole-Blocking Titanium Nitride Contacts for Efficient Silicon Solar Cells. Joule. Available: http://dx.doi.org/10.1016/j.joule.2019.03.008.
SponsorsThe research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under award no. OSR-CRG URF/1/3383, as well as funding from Saudi Aramco.