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dc.contributor.authorMoreno Garcia, Julian
dc.contributor.authorMohammed, Hanan
dc.contributor.authorKosel, Jürgen
dc.date.accessioned2019-04-16T07:07:42Z
dc.date.available2019-04-16T07:07:42Z
dc.date.issued2019-04-02
dc.identifier.citationMoreno JA, Mohammed H, Kosel J (2019) Effect of Segment length on domain wall pinning in multisegmented Co/Ni nanowires for 3D memory applications. Journal of Magnetism and Magnetic Materials 484: 110–113. Available: http://dx.doi.org/10.1016/j.jmmm.2019.04.002.
dc.identifier.issn0304-8853
dc.identifier.doi10.1016/j.jmmm.2019.04.002
dc.identifier.urihttp://hdl.handle.net/10754/631889
dc.description.abstractThe interfaces between different materials in multisegmented nanowires act as pinning centers for domain walls, making these nanowires attractive materials for 3D memory devices. Here, the switching events which accompany a domain wall pinning and depinning in two-segmented Co/Ni nanowires with 80 nm in diameter have been simulated for various segment lengths, using the MAGPAR package within the Virtual Micromagnetics environment. Different switching mechanisms of the magnetization were found for nanowires with different segment lengths, contributing to different values of the pinning and depinnning fields. Domain wall pinning is caused by the stray field from the Co segment; therefore, the position of the pinned domain wall depends on the cobalt segment’s length: in case of the smaller segment lengths, the domain wall is pinned at the interface itself, whereas in case of 700 nm segments a 150 nm displacement of the pinned domain wall from the interface is found, consistent with experimental reports. Domain wall pinning is manifested as a plateau in the magnetization curve. In case of nanowires with shorter segments, another plateau is observed that is related to the creation of a magnetic vortex structure. These findings are crucial towards determining the minimum segment length to achieve a higher bit density that displays optimal pinning and depinning fields.
dc.description.sponsorshipThe research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST). This publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under award No. OSR-2016-CRG5-2956.
dc.publisherElsevier BV
dc.relation.urlhttps://www.sciencedirect.com/science/article/pii/S030488531832821X
dc.rightsNOTICE: this is the author’s version of a work that was accepted for publication in Journal of Magnetism and Magnetic Materials. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Journal of Magnetism and Magnetic Materials, [, , (2019-04-02)] DOI: 10.1016/j.jmmm.2019.04.002 . © 2019. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subjectMicromagnetic simulation
dc.subjectCylindrical nanowire
dc.subjectDomain wall
dc.subjectMagnetic memory
dc.subjectNanofabrication
dc.subjectDomain wall motion
dc.titleEffect of Segment length on domain wall pinning in multisegmented Co/Ni nanowires for 3D memory applications
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentSensing, Magnetism and Microsystems Lab
dc.identifier.journalJournal of Magnetism and Magnetic Materials
dc.eprint.versionPost-print
kaust.personMoreno, Julián A.
kaust.personMohammed, Hanan
kaust.personKosel, Jürgen
kaust.grant.numberOSR-2016-CRG5-2956
dc.date.published-online2019-04-02
dc.date.published-print2019-08


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