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dc.contributor.authorOhkawa, Kazuhiro
dc.contributor.authorNakamura, Kenichi
dc.contributor.authorHirako, Akira
dc.contributor.authorIida, Daisuke
dc.date.accessioned2019-04-10T12:43:13Z
dc.date.available2019-04-10T12:43:13Z
dc.date.issued2019-03-22
dc.identifier.citationOhkawa K, Nakamura K, Hirako A, Iida D (2019) Influence of polymerization among Al- and Ga-containing molecules on growth rate and Al content in AlGaN. Journal of Crystal Growth 516: 17–20. Available: http://dx.doi.org/10.1016/j.jcrysgro.2019.03.023.
dc.identifier.issn0022-0248
dc.identifier.doi10.1016/j.jcrysgro.2019.03.023
dc.identifier.urihttp://hdl.handle.net/10754/631852
dc.description.abstractAlGaN metalorganic vapor-phase epitaxial growth simulation in a TMAl/TMGa/NH3/H2 system was studied to explain its growth rate and Al content. We proposed three kinds of Al- and Ga-containing polymers in this system. By using those polymers, we got good agreements in pressure, TMAl/(TMAl+TMGa) inlet ratio, and temperature dependences of AlGaN growth rate and its Al content between simulations and experiments, even at pressures higher than 40 kPa. Our results showed that the formation of these polymers is enhanced under higher pressures. The simulation considering those polymers could explain the linearity in the TMAl/(TMAl+TMGa) inlet ratio dependences of growth rate and Al content at lower pressure and their non-linearity at higher pressure.
dc.description.sponsorshipThis work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding BAS116760101.
dc.publisherElsevier BV
dc.relation.urlhttps://www.sciencedirect.com/science/article/pii/S0022024819301915
dc.rightsUnder a Creative Commons license
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.subjectA1. Computer simulation
dc.subjectA1. Growth models
dc.subjectA3. Metalorganic vapor phase epitaxy
dc.subjectB1. Nitrides
dc.subjectB2. Semiconducting III-V materials
dc.subjectB3. Light emitting diodes
dc.titleInfluence of polymerization among Al- and Ga-containing molecules on growth rate and Al content in AlGaN
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.identifier.journalJournal of Crystal Growth
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Applied Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan
kaust.personOhkawa, Kazuhiro
kaust.personIida, Daisuke
kaust.grant.numberBAS116760101
refterms.dateFOA2019-04-10T13:14:56Z
dc.date.published-online2019-03-22
dc.date.published-print2019-06


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