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dc.contributor.authorWei, Pai-Chun
dc.contributor.authorBhattacharya, Sriparna
dc.contributor.authorLiu, Yu Fei
dc.contributor.authorLiu, Fengjiao
dc.contributor.authorHe, Jian
dc.contributor.authorTung, Yung Hsiang
dc.contributor.authorYang, Chun Chuen
dc.contributor.authorHsing, Cheng Rong
dc.contributor.authorNguyen, Duc Long
dc.contributor.authorWei, Ching Ming
dc.contributor.authorChou, Mei Yin
dc.contributor.authorLai, Yen Chung
dc.contributor.authorHung, Tsu Lien
dc.contributor.authorGuan, Syu You
dc.contributor.authorChang, Chia Seng
dc.contributor.authorWu, Hsin Jay
dc.contributor.authorLee, Chi Hung
dc.contributor.authorLi, Wen Hsien
dc.contributor.authorHermann, Raphael P.
dc.contributor.authorChen, Yang Yuan
dc.contributor.authorRao, Apparao M.
dc.date.accessioned2019-04-02T07:10:40Z
dc.date.available2019-04-02T07:10:40Z
dc.date.issued2019-03-19
dc.identifier.citationWei P-C, Bhattacharya S, Liu Y-F, Liu F, He J, et al. (2019) Thermoelectric Figure-of-Merit of Fully Dense Single-Crystalline SnSe. ACS Omega 4: 5442–5450. Available: http://dx.doi.org/10.1021/acsomega.8b03323.
dc.identifier.issn2470-1343
dc.identifier.issn2470-1343
dc.identifier.doi10.1021/acsomega.8b03323
dc.identifier.urihttp://hdl.handle.net/10754/631790
dc.description.abstractSingle-crystalline SnSe has attracted much attention because of its record high figure-of-merit ZT ≈ 2.6; however, this high ZT has been associated with the low mass density of samples which leaves the intrinsic ZT of fully dense pristine SnSe in question. To this end, we prepared high-quality fully dense SnSe single crystals and performed detailed structural, electrical, and thermal transport measurements over a wide temperature range along the major crystallographic directions. Our single crystals were fully dense and of high purity as confirmed via high statistics 119Sn Mössbauer spectroscopy that revealed <0.35 at. % Sn(IV) in pristine SnSe. The temperature-dependent heat capacity (Cp) provided evidence for the displacive second-order phase transition from Pnma to Cmcm phase at Tc ≈ 800 K and a small but finite Sommerfeld coefficient γ0 which implied the presence of a finite Fermi surface. Interestingly, despite its strongly temperature-dependent band gap inferred from density functional theory calculations, SnSe behaves like a low-carrier-concentration multiband metal below 600 K, above which it exhibits a semiconducting behavior. Notably, our high-quality single-crystalline SnSe exhibits a thermoelectric figure-of-merit ZT ∼1.0, ∼0.8, and ∼0.25 at 850 K along the b, c, and a directions, respectively.
dc.description.sponsorshipThe authors wish to acknowledge Prof. Terry Tritt (Clemson University) for providing access to low temperature measurement facilities in his laboratory, and Prof. Julian Goldsmid, Dr. Pooja Puneet, and Prakash Parajuli for valuable discussions. We also thank National Institute of Standards and Technology and Dr. Jeffrey W. Lynn for providing the neutron beam time that made the neutron rocking curve measurements possible. R.P.H. thanks Dipanshu Bansal and Jiawang Hong for numerical phonon data in refs (11) and (26).
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttps://pubs.acs.org/doi/10.1021/acsomega.8b03323
dc.rightsThis is an open access article published under an ACS AuthorChoice License, which permits copying and redistribution of the article or any adaptations for non-commercial purposes.
dc.rights.urihttp://pubs.acs.org/page/policy/authorchoice_termsofuse.html
dc.titleThermoelectric Figure-of-Merit of Fully Dense Single-Crystalline SnSe
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.identifier.journalACS Omega
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionInstitute of Physics, Academia Sinica, Taipei, 11529, , , Taiwan
dc.contributor.institutionDepartment of Physics and Astronomy, Clemson Nanomaterials Institute, Clemson University, Clemson, 29634-0978, , United States
dc.contributor.institutionDepartment of Physics, Chung Yuan Christian University, Chung-Li, 32023, , Taiwan
dc.contributor.institutionInstitute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, , , Taiwan
dc.contributor.institutionMolecular Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei, 11529, , Taiwan
dc.contributor.institutionDepartment of Physics, National Central University, Taoyuan City, 32001, , Taiwan
dc.contributor.institutionNational Synchrotron Radiation Research Center, Hsin-Chu, 30076, , Taiwan
dc.contributor.institutionDepartment of Physics, National Taiwan University, Taipei, 10617, , Taiwan
dc.contributor.institutionDepartment of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 30010, , Taiwan
dc.contributor.institutionMaterials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, , United States
kaust.personWei, Pai-Chun
refterms.dateFOA2019-04-02T09:01:12Z
dc.date.published-online2019-03-19
dc.date.published-print2019-03-31


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