Narrow-line InGaN/GaN green laser diode with high-order distributed-feedback surface grating
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2019 - Narrow-line InGaNGaN green laser diode with high-order distributed-feedback surface grating - Holguín-Lerma et al.pdf
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Article
KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Photonics Laboratory
KAUST Grant Number
BAS/1/1614-01-01GEN/1/6607-01-01
REP/1/2878-01-01
KCR/1/2081-01-01
Date
2019-03-27Online Publication Date
2019-03-27Print Publication Date
2019-04-01Permanent link to this record
http://hdl.handle.net/10754/631775Metadata
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We demonstrate narrow-line green laser emission at 513.85 nm with a linewidth of 31 pm and side-mode suppression ratio of 36.9 dB, operating under continuous-wave injection at room temperature. A high-order (40th) distributed-feedback surface grating fabricated on multimode InGaN-based green laser diodes via a focused ion beam produces resolution-limited, single-mode lasing with an optical power of 14 mW, lasing threshold of 7.27 kA cm−2, and maximum slope efficiency of 0.32 W A−1. Our realization of narrow-line green laser diodes opens a pathway toward efficient optical communications, sensing, and atomic clocks.Citation
Holguín-Lerma JA, Ng TK, Ooi BS (2019) Narrow-line InGaN/GaN green laser diode with high-order distributed-feedback surface grating. Applied Physics Express 12: 042007. Available: http://dx.doi.org/10.7567/1882-0786/ab0a57.Sponsors
This work was supported by the King Abdullah University of Science and Technology (KAUST) funding BAS/1/1614-01-01, GEN/1/6607-01-01, REP/1/2878-01-01; KAUST equipment funding KCR/1/2081-01-01. Funding from the King Abdulaziz City for Science and Technology (KACST) Grant no. R2-FP-008, is gratefully acknowledged.Publisher
Japan Society of Applied PhysicsJournal
Applied Physics ExpressAdditional Links
https://iopscience.iop.org/article/10.7567/1882-0786/ab0a57/metaScopus Count
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