Narrow-line InGaN/GaN green laser diode with high-order distributed-feedback surface grating
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Online Publication Date2019-03-27
Print Publication Date2019-04-01
Permanent link to this recordhttp://hdl.handle.net/10754/631775
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AbstractWe demonstrate narrow-line green laser emission at 513.85 nm with a linewidth of 31 pm and side-mode suppression ratio of 36.9 dB, operating under continuous-wave injection at room temperature. A high-order (40th) distributed-feedback surface grating fabricated on multimode InGaN-based green laser diodes via a focused ion beam produces resolution-limited, single-mode lasing with an optical power of 14 mW, lasing threshold of 7.27 kA cm−2, and maximum slope efficiency of 0.32 W A−1. Our realization of narrow-line green laser diodes opens a pathway toward efficient optical communications, sensing, and atomic clocks.
CitationHolguín-Lerma JA, Ng TK, Ooi BS (2019) Narrow-line InGaN/GaN green laser diode with high-order distributed-feedback surface grating. Applied Physics Express 12: 042007. Available: http://dx.doi.org/10.7567/1882-0786/ab0a57.
SponsorsThis work was supported by the King Abdullah University of Science and Technology (KAUST) funding BAS/1/1614-01-01, GEN/1/6607-01-01, REP/1/2878-01-01; KAUST equipment funding KCR/1/2081-01-01. Funding from the King Abdulaziz City for Science and Technology (KACST) Grant no. R2-FP-008, is gratefully acknowledged.
PublisherJapan Society of Applied Physics
JournalApplied Physics Express
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