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dc.contributor.authorTit, Nacir
dc.contributor.authorMishra, Pawan
dc.contributor.authorNg, Tien Khee
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2019-03-14T14:20:46Z
dc.date.available2019-03-14T14:20:46Z
dc.date.issued2018-04-18
dc.identifier.citationTit N, Mishra P, Ng TK, Ooi BS (2018) Power-dependent photoluminescence in strained In<inf>x</inf>Ga<inf>1−x</inf>N/GaN multiple-quantum wells: Simulations of alloying and interface-specific effects. 2018 5th International Conference on Renewable Energy: Generation and Applications (ICREGA). Available: http://dx.doi.org/10.1109/ICREGA.2018.8337637.
dc.identifier.doi10.1109/ICREGA.2018.8337637
dc.identifier.urihttp://hdl.handle.net/10754/631637
dc.description.abstractCombined experimental and theoretical efforts are focused to study hexagonal InGaN/GaN[0001] multiple-quantum wells (MQWs). Plasma-assisted molecular-beam epitaxy (PA-MBE) is used to grow high-quality MQWs with multiplicity of 1, 3 and 5. Characterizations methods based on scanning tunneling electron microscopy (STEM) and photoluminescence (PL) indicated that each period is composed of 10 nm GaN barrier and 2.5 nm InGaN well with x ≤ 0.12. Usually, these MQWs have radiations with the blue region. However, in power (from 0.008 mW to 8 mW) dependent micro-photoluminescence (PL), measured at room temperature, blue shifts of about 11.11 nm, 11.94 nm and 14.94 nm were observed corresponding to the single-quantum well (1-QW), 3-MQW, and 5-MQW, respectively. While in literature such shift is speculated to be attributed to so-called
dc.description.sponsorshipOne of the authors (N.T.) is indebted to thank the financial support of the UAEU (Grants no.31R068 and 31R145).
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.subjectelectronic-structure calculation
dc.subjectGaN-based LED
dc.subjectMultiple-quantum wells
dc.subjectOptical properties
dc.subjectPhotoluminescence
dc.titlePower-dependent photoluminescence in strained In<inf>x</inf>Ga<inf>1−x</inf>N/GaN multiple-quantum wells: Simulations of alloying and interface-specific effects
dc.typeConference Paper
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentPhotonics Laboratory
dc.identifier.journal2018 5th International Conference on Renewable Energy: Generation and Applications (ICREGA)
dc.conference.date2018-02-26 to 2018-02-28
dc.conference.name5th International Conference on Renewable Energy: Generation and Application, ICREGA 2018
dc.conference.locationAl Ain, ARE
dc.contributor.institutionPhysics Department, UAE University, Al-Ain, , United Arab Emirates
kaust.personMishra, Pawan
kaust.personNg, Tien Khee
kaust.personOoi, Boon S.
dc.date.published-online2018-04-18
dc.date.published-print2018-02


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