Power-dependent photoluminescence in strained In<inf>x</inf>Ga<inf>1−x</inf>N/GaN multiple-quantum wells: Simulations of alloying and interface-specific effects
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Online Publication Date2018-04-18
Print Publication Date2018-02
Permanent link to this recordhttp://hdl.handle.net/10754/631637
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AbstractCombined experimental and theoretical efforts are focused to study hexagonal InGaN/GaN multiple-quantum wells (MQWs). Plasma-assisted molecular-beam epitaxy (PA-MBE) is used to grow high-quality MQWs with multiplicity of 1, 3 and 5. Characterizations methods based on scanning tunneling electron microscopy (STEM) and photoluminescence (PL) indicated that each period is composed of 10 nm GaN barrier and 2.5 nm InGaN well with x ≤ 0.12. Usually, these MQWs have radiations with the blue region. However, in power (from 0.008 mW to 8 mW) dependent micro-photoluminescence (PL), measured at room temperature, blue shifts of about 11.11 nm, 11.94 nm and 14.94 nm were observed corresponding to the single-quantum well (1-QW), 3-MQW, and 5-MQW, respectively. While in literature such shift is speculated to be attributed to so-called
CitationTit N, Mishra P, Ng TK, Ooi BS (2018) Power-dependent photoluminescence in strained In<inf>x</inf>Ga<inf>1−x</inf>N/GaN multiple-quantum wells: Simulations of alloying and interface-specific effects. 2018 5th International Conference on Renewable Energy: Generation and Applications (ICREGA). Available: http://dx.doi.org/10.1109/ICREGA.2018.8337637.
SponsorsOne of the authors (N.T.) is indebted to thank the financial support of the UAEU (Grants no.31R068 and 31R145).
Conference/Event name5th International Conference on Renewable Energy: Generation and Application, ICREGA 2018