Photoelectrochemical hydrogen generation using graded In-content InGaN photoelectrode structures
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Online Publication Date2019-03-07
Print Publication Date2019-05
Permanent link to this recordhttp://hdl.handle.net/10754/631563
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AbstractWe have improved the InGaN/GaN heterointerface to achieve higher energy conversion efficiency by replacing a uniform InGaN layer with a graded In-content InGaN layer. Even In0.08Ga0.92N/GaN heterostructure has a large conduction band offset, which is large enough to suppress the photocurrent in the photocatalytic system. The graded In-content InGaN structures were grown by metalorganic vapor-phase epitaxy by changing the TMIn flow rate gradually. X-ray reciprocal space mapping confirmed the graded structures. The graded InGaN/GaN structure significantly increased photocurrent and H2 generation by 50% and more compared with the conventional uniform InGaN/GaN structures.
CitationOhkawa, K. et al., 2019. Photoelectrochemical hydrogen generation using graded In-content InGaN photoelectrode structures. Nano Energy, 59, pp.569–573. Available at: http://dx.doi.org/10.1016/j.nanoen.2019.03.011.
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