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dc.contributor.authorAlfaraj, Nasir
dc.contributor.authorAlhamoud, Abdullah
dc.contributor.authorPriante, Davide
dc.contributor.authorJanjua, Bilal
dc.contributor.authorAlatawi, Abdullah
dc.contributor.authorAlbadri, Abdulrahman M.
dc.contributor.authorAlyamani, Ahmed Y.
dc.contributor.authorNg, Tien Khee
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2019-03-03T13:34:39Z
dc.date.available2019-03-03T13:34:39Z
dc.date.issued2019-03-01
dc.identifier.citationAlfaraj N, Alhamoud AA, Priante D, Janjua B, Alatawi AA, et al. (2019) Functional integrity and stable high-temperature operation of planarized ultraviolet-A AlxGa1−xN/AlyGa1−yN multiple-quantum-disk nanowire LEDs with charge-conduction promoting interlayer. Gallium Nitride Materials and Devices XIV. Available: http://dx.doi.org/10.1117/12.2506210.
dc.identifier.doi10.1117/12.2506210
dc.identifier.urihttp://hdl.handle.net/10754/631282
dc.description.abstractUnprecedented high-temperature operational stability of interfacial silicide-free ultraviolet-A multiple-quantum- disk AlGaN nanowire-based light-emitting diodes on metal is achieved and investigated. Reasonable variations in device operational parameters across a wide range of temperatures demonstrate the high quality of the layer interfaces and efficient carrier injection. We previously presented ultraviolet-A quantum-confined AlxGa1-xN/AlyGa1-yN nanowire-based light-emitting diodes and studied their steady-state electro- and photo- luminescent characteristics at room temperature. Herein, we significantly expand the scope of our previous work by investigating the operational stability of the device across a wide range of temperatures (-50-100°C) with conformal parylene-C deposition, forming a nanowire forest as a polymer/nanowire three-dimensional composite material. This work constitutes part of a larger study into the operational stability of ultraviolet light-emitting diode chemical sensors at a wide range of temperatures for operation in harsh environments such as in downhole oil exploration.
dc.description.sponsorshipThe authors acknowledge the financial support of King Abdulaziz City for Science and Technology (KACST), grant no. KACST TIC R2-FP-008. This work was partially supported by King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1614-01-01, and MBE equipment funding, C/M-20000-12-001-77 and KCR/1/4055-01-01.
dc.publisherSPIE-Intl Soc Optical Eng
dc.relation.urlhttps://www.spiedigitallibrary.org/conference-proceedings-of-spie/10918/2506210/Functional-integrity-and-stable-high-temperature-operation-of-planarized-ultraviolet/10.1117/12.2506210.full
dc.rightsArchived with thanks to Gallium Nitride Materials and Devices XIV
dc.subjectUltraviolet-A
dc.subjectAlxGa1−xN
dc.subjectnanowire-based LEDs
dc.subjectQDisks
dc.subjecthigh-temperature operation
dc.subjectstability
dc.subjectdownhole sensing.
dc.titleFunctional integrity and stable high-temperature operation of planarized ultraviolet-A AlxGa1−xN/AlyGa1−yN multiple-quantum-disk nanowire LEDs with charge-conduction promoting interlayer
dc.typeConference Paper
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentKing Abdullah Univ. of Science and Technology
dc.identifier.journalGallium Nitride Materials and Devices XIV
dc.conference.date2-7 February, 2019
dc.conference.nameGallium Nitride Materials and Devices XIV
dc.conference.locationSan Francisco, CA, United States
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionKing Abdulaziz City for Science and Technology
kaust.personAlfaraj, Nasir
kaust.personAlhamoud, Abdullah
kaust.personPriante, Davide
kaust.personJanjua, Bilal
kaust.personAlatawi, Abdullah
kaust.personNg, Tien Khee
kaust.personOoi, Boon S.
kaust.grant.numberBAS/1/1614-01-01
refterms.dateFOA2019-03-03T13:34:39Z


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