Functional integrity and stable high-temperature operation of planarized ultraviolet-A AlxGa1−xN/AlyGa1−yN multiple-quantum-disk nanowire LEDs with charge-conduction promoting interlayer
Albadri, Abdulrahman M.
Alyamani, Ahmed Y.
Ng, Tien Khee
Ooi, Boon S.
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
King Abdullah Univ. of Science and Technology
KAUST Grant NumberBAS/1/1614-01-01
Permanent link to this recordhttp://hdl.handle.net/10754/631282
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AbstractUnprecedented high-temperature operational stability of interfacial silicide-free ultraviolet-A multiple-quantum- disk AlGaN nanowire-based light-emitting diodes on metal is achieved and investigated. Reasonable variations in device operational parameters across a wide range of temperatures demonstrate the high quality of the layer interfaces and efficient carrier injection. We previously presented ultraviolet-A quantum-confined AlxGa1-xN/AlyGa1-yN nanowire-based light-emitting diodes and studied their steady-state electro- and photo- luminescent characteristics at room temperature. Herein, we significantly expand the scope of our previous work by investigating the operational stability of the device across a wide range of temperatures (-50-100°C) with conformal parylene-C deposition, forming a nanowire forest as a polymer/nanowire three-dimensional composite material. This work constitutes part of a larger study into the operational stability of ultraviolet light-emitting diode chemical sensors at a wide range of temperatures for operation in harsh environments such as in downhole oil exploration.
CitationAlfaraj N, Alhamoud AA, Priante D, Janjua B, Alatawi AA, et al. (2019) Functional integrity and stable high-temperature operation of planarized ultraviolet-A AlxGa1−xN/AlyGa1−yN multiple-quantum-disk nanowire LEDs with charge-conduction promoting interlayer. Gallium Nitride Materials and Devices XIV. Available: http://dx.doi.org/10.1117/12.2506210.
SponsorsThe authors acknowledge the financial support of King Abdulaziz City for Science and Technology (KACST), grant no. KACST TIC R2-FP-008. This work was partially supported by King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1614-01-01, and MBE equipment funding, C/M-20000-12-001-77 and KCR/1/4055-01-01.
PublisherSPIE-Intl Soc Optical Eng
Conference/Event nameGallium Nitride Materials and Devices XIV