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    Functional integrity and stable high-temperature operation of planarized ultraviolet-A AlxGa1−xN/AlyGa1−yN multiple-quantum-disk nanowire LEDs with charge-conduction promoting interlayer

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    Type
    Conference Paper
    Authors
    Alfaraj, Nasir cc
    Alhamoud, Abdullah
    Priante, Davide cc
    Janjua, Bilal cc
    Alatawi, Abdullah cc
    Albadri, Abdulrahman M.
    Alyamani, Ahmed Y.
    Ng, Tien Khee cc
    Ooi, Boon S. cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    King Abdullah Univ. of Science and Technology
    KAUST Grant Number
    BAS/1/1614-01-01
    Date
    2019-03-01
    Permanent link to this record
    http://hdl.handle.net/10754/631282
    
    Metadata
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    Abstract
    Unprecedented high-temperature operational stability of interfacial silicide-free ultraviolet-A multiple-quantum- disk AlGaN nanowire-based light-emitting diodes on metal is achieved and investigated. Reasonable variations in device operational parameters across a wide range of temperatures demonstrate the high quality of the layer interfaces and efficient carrier injection. We previously presented ultraviolet-A quantum-confined AlxGa1-xN/AlyGa1-yN nanowire-based light-emitting diodes and studied their steady-state electro- and photo- luminescent characteristics at room temperature. Herein, we significantly expand the scope of our previous work by investigating the operational stability of the device across a wide range of temperatures (-50-100°C) with conformal parylene-C deposition, forming a nanowire forest as a polymer/nanowire three-dimensional composite material. This work constitutes part of a larger study into the operational stability of ultraviolet light-emitting diode chemical sensors at a wide range of temperatures for operation in harsh environments such as in downhole oil exploration.
    Citation
    Alfaraj N, Alhamoud AA, Priante D, Janjua B, Alatawi AA, et al. (2019) Functional integrity and stable high-temperature operation of planarized ultraviolet-A AlxGa1−xN/AlyGa1−yN multiple-quantum-disk nanowire LEDs with charge-conduction promoting interlayer. Gallium Nitride Materials and Devices XIV. Available: http://dx.doi.org/10.1117/12.2506210.
    Sponsors
    The authors acknowledge the financial support of King Abdulaziz City for Science and Technology (KACST), grant no. KACST TIC R2-FP-008. This work was partially supported by King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1614-01-01, and MBE equipment funding, C/M-20000-12-001-77 and KCR/1/4055-01-01.
    Publisher
    SPIE-Intl Soc Optical Eng
    Journal
    Gallium Nitride Materials and Devices XIV
    Conference/Event name
    Gallium Nitride Materials and Devices XIV
    DOI
    10.1117/12.2506210
    Additional Links
    https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10918/2506210/Functional-integrity-and-stable-high-temperature-operation-of-planarized-ultraviolet/10.1117/12.2506210.full
    ae974a485f413a2113503eed53cd6c53
    10.1117/12.2506210
    Scopus Count
    Collections
    Conference Papers; Electrical Engineering Program; Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

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