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dc.contributor.authorYang, Xinbo
dc.contributor.authorAydin, Erkan
dc.contributor.authorXu, Hang
dc.contributor.authorKang, Jingxuan
dc.contributor.authorLiu, Wenzhu
dc.contributor.authorWan, Yimao
dc.contributor.authorSamundsett, Christian
dc.contributor.authorCuevas, Andres
dc.contributor.authorDe Wolf, Stefaan
dc.date.accessioned2019-02-27T09:49:49Z
dc.date.available2019-02-27T09:49:49Z
dc.date.issued2018-12-08
dc.identifier.citationYang X, Aydin E, Xu H, Kang J, Liu W, et al. (2018) Tantalum Nitride Hole-Blocking Layer for Efficient Silicon Solar Cells. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). Available: http://dx.doi.org/10.1109/PVSC.2018.8548282.
dc.identifier.doi10.1109/PVSC.2018.8548282
dc.identifier.urihttp://hdl.handle.net/10754/631264
dc.description.abstractMinimizing carrier recombination losses at contact regions by using carrier-selective contact materials, instead of heavily doping the silicon, has attracted considerable attention for high-efficiency, low-cost crystalline silicon (c-Si) solar cells. Here we present a novel and stable metal nitride based hole-blocking layer for efficient silicon solar cells.The ALD-deposited tantalum nitride (TaNx) films are demonstrated to provide excellent holeblocking property on silicon surfaces, due to their small conduction band offset and large valence band offset with silicon. Thin TaNx films are found to provide not only moderate surface passivation to silicon surfaces, but also allow a relatively low contact resistivity at the TaNx n-Si heterojunctions. An efficiency over 20% is achieved on n-type silicon solar cells featuring a simple full-area electron-selective TaNx contact, representing an absolute efficiency gain of 4.0% over the control device without TaNxcontact.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.urlhttps://ieeexplore.ieee.org/document/8548282
dc.subjectHole-blocking
dc.subjectpassivating contact
dc.subjectsilicon solar cell
dc.subjecttantalum nitride
dc.titleTantalum Nitride Hole-Blocking Layer for Efficient Silicon Solar Cells
dc.typeConference Paper
dc.contributor.departmentKAUST Catalysis Center (KCC)
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journal2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)
dc.conference.date2018-06-10 to 2018-06-15
dc.conference.name7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
dc.conference.locationWaikoloa Village, HI, USA
dc.contributor.institutionResearch School of Engineering, Australian National University, Canberra, ACT, 2601, , Australia
kaust.personYang, Xinbo
kaust.personAydin, Erkan
kaust.personXu, Hang
kaust.personKang, Jingxuan
kaust.personLiu, Wenzhu
kaust.personDe Wolf, Stefaan
dc.date.published-online2018-12-08
dc.date.published-print2018-06


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