Facile fabrication of ZnO nanowire memory device based on chemically-treated surface defects
Kim, Tae Hyeon
Nam, Jae Hyeon
Jang, Hye Yeon
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Physical Science and Engineering (PSE) Division
Online Publication Date2019-02-12
Print Publication Date2019-04-12
Permanent link to this recordhttp://hdl.handle.net/10754/631239
MetadataShow full item record
AbstractIn this study, we demonstrate a transistor-type ZnO nanowire (NW) memory device based on the surface defect states of a rough ZnO NW, which is obtained by introducing facile H2O2 solution treatment. The surface defect states of the ZnO NW are validated by photoluminescence characterization. A memory device based on the rough ZnO NW exhibits clearly separated bi-stable states (ON and OFF states). A significant current fluctuation does not exist during repetitive endurance cycling test. Stable memory retention characteristics are also achieved at a high temperature of 85 °C and at room temperature. The surface-treated ZnO NW device also exhibits dynamically well-responsive pulse switching under a sequential pulse test configuration, thereby indicating its potential practical memory applications. The simple chemical treatment strategy can be widely used for modulating the surface states of diverse low-dimensional materials.
CitationPark W, Kim TH, Nam JH, Jang HY, Pak Y, et al. (2019) Facile fabrication of ZnO nanowire memory device based on chemically-treated surface defects. Nanotechnology 30: 155201. Available: http://dx.doi.org/10.1088/1361-6528/aaff74.
SponsorsThis work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT; Ministry of Science and ICT) (No. 2017R1C1B1005076). This research was also financially supported by the Ministry of Trade, Industry and Energy (MOTIE) and Korea Institute for Advancement of Technology (KIAT) through the National Innovation Cluster R&D program (P0006704).