De Wolf, Stefaan
KAUST DepartmentComputational Physics and Materials Science (CPMS)
KAUST Solar Center (KSC)
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
KAUST Grant NumberOSR-CRG6-2017 3383
Online Publication Date2019-02-19
Print Publication Date2019-02-18
Permanent link to this recordhttp://hdl.handle.net/10754/631205
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AbstractPassivating metal/silicon contacts combine low carrier recombination with low contact resistivities, enabled by a low gap state density at their interface. Such contacts find applications in high-efficiency solar cells. We perform first-principles calculations based on density functional theory to investigate the surface defect and metal-induced gap state density of silicon in close contact with metals (Al and Ag). We confirm that surface hydrogenation fully removes surface-defect gap states of (111)-oriented silicon surfaces. However, the metal-induced gap state density increases significantly when metals are closer than 0.5 nm to such surfaces. These results highlight the importance of the tunneling-film thickness in achieving effective passivating-contact formation.
CitationSajjad M, Yang X, Altermatt P, Singh N, Schwingenschlögl U, et al. (2019) Metal-induced gap states in passivating metal/silicon contacts. Applied Physics Letters 114: 071601. Available: http://dx.doi.org/10.1063/1.5066423.
SponsorsThe research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. OSR-CRG6-2017 3383.
JournalApplied Physics Letters