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dc.contributor.authorWu, Zhuopeng
dc.contributor.authorZhang, Liping
dc.contributor.authorChen, Renfang
dc.contributor.authorLiu, Wenzhu
dc.contributor.authorLi, Zhenfei
dc.contributor.authorMeng, Fanying
dc.contributor.authorLiu, Zhengxin
dc.date.accessioned2019-02-25T06:44:31Z
dc.date.available2019-02-25T06:44:31Z
dc.date.issued2018-12-26
dc.identifier.citationWu Z, Zhang L, Chen R, Liu W, Li Z, et al. (2019) Improved amorphous/crystalline silicon interface passivation for silicon heterojunction solar cells by hot-wire atomic hydrogen during doped a-Si:H deposition. Applied Surface Science 475: 504–509. Available: http://dx.doi.org/10.1016/j.apsusc.2018.12.239.
dc.identifier.issn0169-4332
dc.identifier.doi10.1016/j.apsusc.2018.12.239
dc.identifier.urihttp://hdl.handle.net/10754/631160
dc.description.abstractIntrinsic/doped stacked hydrogenated amorphous silicon (a-Si:H) are widely used passivation layers for amorphous/crystalline silicon (a-Si/c-Si) heterojunction solar cells. This work reports that hot wire chemical vapor deposition of doped a-Si:H can significantly modify the property of the underlying intrinsic a-Si:H (a-Si:H(i)) as well as a-Si/c-Si interface passivation, which stems from the in-diffusion of highly reactive atomic hydrogen. Fourier transform infrared spectroscopy, spectroscopic ellipsometry and Raman analyses indicate that the underlying a-Si:H(i) films become more compact and less defected as a result of network reconstruction during doped a-Si:H capping. After this reconstruction, underdense a-Si:H(i) films obtained superior passivation quality than widely used dense layers, despite the inferior quality in the initial state. Effective minority carrier lifetime of c-Si passivated by underdense a-Si:H(i) was 19.9 ms, much higher than 15.2 ms in the case of using dense a-Si:H(i). The porous structure of underdense a-Si:H(i) facilitates hydrogen diffusion towards a-Si/c-Si interface and hence a rapid reduction of interface defect densities occurs, accounting for the better passivation quality. SHJ solar cells (160 μm, 156 × 156 mm) with industry-compatible process were fabricated, yielding the efficiency up to 23.0% with high V values of 741 mV.
dc.description.sponsorshipThe authors gratefully acknowledge ULVAC for their equipment support of HWCVD deposition system. This work was supported by projects of the Strategic Priority Research Program and the Joint Fund of Chinese Academy of Sciences (XDA17020403, 6141A01141604), and a project of Shanghai Municipal Science and Technology Committee (17DZ1201100).
dc.publisherElsevier BV
dc.relation.urlhttps://www.sciencedirect.com/science/article/pii/S0169433218335876
dc.rightsNOTICE: this is the author’s version of a work that was accepted for publication in Applied Surface Science. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Applied Surface Science, [475, , (2018-12-26)] DOI: 10.1016/j.apsusc.2018.12.239 . © 2018. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subjectAmorphous/crystalline silicon heterojunction solar cells
dc.subjectHot wire chemical vapor deposition
dc.subjectHydrogenated amorphous silicon
dc.subjectSurface passivation
dc.titleImproved amorphous/crystalline silicon interface passivation for silicon heterojunction solar cells by hot-wire atomic hydrogen during doped a-Si:H deposition
dc.typeArticle
dc.contributor.departmentKAUST Catalysis Center (KCC)
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalApplied Surface Science
dc.eprint.versionPost-print
dc.contributor.institutionUniversity of Chinese Academy of Sciences (UCAS), Shijingshan, Beijing, 100049, , China
dc.contributor.institutionResearch Center for New Energy Technology (RCNET), Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Jiading, Shanghai, 201800, , , China
kaust.personLiu, Wenzhu
refterms.dateFOA2020-12-26T00:00:00Z
dc.date.published-online2018-12-26
dc.date.published-print2019-05


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