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dc.contributor.authorThiburce, Quentin
dc.contributor.authorGiovannitti, Alexander
dc.contributor.authorMcCulloch, Iain
dc.contributor.authorCampbell, Alasdair J.
dc.date.accessioned2019-02-10T08:16:15Z
dc.date.available2019-02-10T08:16:15Z
dc.date.issued2019-02-05
dc.identifier.citationThiburce Q, Giovannitti A, McCulloch I, Campbell AJ (2019) Nanoscale Ion-Doped Polymer Transistors. Nano Letters. Available: http://dx.doi.org/10.1021/acs.nanolett.8b04717.
dc.identifier.issn1530-6984
dc.identifier.issn1530-6992
dc.identifier.doi10.1021/acs.nanolett.8b04717
dc.identifier.urihttp://hdl.handle.net/10754/631022
dc.description.abstractOrganic transistors with submicron dimensions have been shown to deviate from the expected behaviour due to a variety of so-called ‘short-channel’ effects, resulting in nonlinear output characteristics and a lack of current saturation, considerably limiting their use. Here, using an electrochemically-doped polymer in which ions are dynamically injected and removed from the bulk of the semiconductor, we show that devices with nanoscale channel lengths, down to 50 nm, exhibit output curves with well-defined linear and saturation regimes. Additionally, they show very large on-currents on par with their microscale counterparts, large on-to-off ratios of 108, and record-high width-normalised transconductances above 10 S m−1. We believe this work paves the way for the fabrication of high-gain, high-current polymer integrated circuits such as sensor arrays operating at voltages below |1 V| and prepared using simple solution processing methods.
dc.description.sponsorshipThis work was supported by the European Commission’s 7th Framework Programme (FP7/2007-2013) under grant agreement no. 607896 (OrgBIO). We also thank J. Cambiasso for helpful discussions on electron-beam lithography and for helping with SEM imaging.
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttps://pubs.acs.org/doi/10.1021/acs.nanolett.8b04717
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acs.nanolett.8b04717.
dc.subjectorganic electronics
dc.subjectconjugated polymer
dc.subjectlarge transconductance
dc.subjectorganic electrochemical transistor (OECT)
dc.subjection gel
dc.subjectshort-channel transistor
dc.titleNanoscale Ion-Doped Polymer Transistors
dc.typeArticle
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.contributor.departmentChemical Science Program
dc.contributor.departmentKAUST Solar Center (KSC)
dc.identifier.journalNano Letters
dc.eprint.versionPost-print
dc.contributor.institutionExperimental Solid State Physics group, Department of Physics, Blackett Laboratory, Imperial College London, South Kensington Campus, London SW7 2AZ, United Kingdom
dc.contributor.institutionCentre for Plastic Electronics, Imperial College London, South Kensington Campus, London SW7 2AZ, United Kingdom
dc.contributor.institutionDepartment of Chemistry, Imperial College London, South Kensington Campus, London SW7 2AZ, United Kingdom
kaust.authorMcCulloch, Iain


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