Type
ArticleKAUST Department
Chemical Science ProgramKAUST Solar Center (KSC)
Physical Science and Engineering (PSE) Division
Date
2019-02-05Online Publication Date
2019-02-05Print Publication Date
2019-03-13Permanent link to this record
http://hdl.handle.net/10754/631022
Metadata
Show full item recordAbstract
Organic transistors with submicron dimensions have been shown to deviate from the expected behaviour due to a variety of so-called ‘short-channel’ effects, resulting in nonlinear output characteristics and a lack of current saturation, considerably limiting their use. Here, using an electrochemically-doped polymer in which ions are dynamically injected and removed from the bulk of the semiconductor, we show that devices with nanoscale channel lengths, down to 50 nm, exhibit output curves with well-defined linear and saturation regimes. Additionally, they show very large on-currents on par with their microscale counterparts, large on-to-off ratios of 108, and record-high width-normalised transconductances above 10 S m−1. We believe this work paves the way for the fabrication of high-gain, high-current polymer integrated circuits such as sensor arrays operating at voltages below |1 V| and prepared using simple solution processing methods.Citation
Thiburce Q, Giovannitti A, McCulloch I, Campbell AJ (2019) Nanoscale Ion-Doped Polymer Transistors. Nano Letters. Available: http://dx.doi.org/10.1021/acs.nanolett.8b04717.Sponsors
This work was supported by the European Commission’s 7th Framework Programme (FP7/2007-2013) under grant agreement no. 607896 (OrgBIO). We also thank J. Cambiasso for helpful discussions on electron-beam lithography and for helping with SEM imaging.Publisher
American Chemical Society (ACS)Journal
Nano LettersAdditional Links
https://pubs.acs.org/doi/10.1021/acs.nanolett.8b04717ae974a485f413a2113503eed53cd6c53
10.1021/acs.nanolett.8b04717