Direct Growth of Single Crystalline GaN Nanowires on Indium Tin Oxide-Coated Silica
dc.contributor.author | Prabaswara, Aditya | |
dc.contributor.author | Min, Jung-Wook | |
dc.contributor.author | Subedi, Ram | |
dc.contributor.author | Tangi, Malleswararao | |
dc.contributor.author | Holguin Lerma, Jorge Alberto | |
dc.contributor.author | Zhao, Chao | |
dc.contributor.author | Priante, Davide | |
dc.contributor.author | Ng, Tien Khee | |
dc.contributor.author | Ooi, Boon S. | |
dc.date.accessioned | 2019-02-10T08:15:55Z | |
dc.date.available | 2019-02-10T08:15:55Z | |
dc.date.issued | 2019-02-05 | |
dc.identifier.citation | Prabaswara A, Min J-W, Subedi RC, Tangi M, Holguin-Lerma JA, et al. (2019) Direct Growth of Single Crystalline GaN Nanowires on Indium Tin Oxide-Coated Silica. Nanoscale Research Letters 14. Available: http://dx.doi.org/10.1186/s11671-019-2870-9. | |
dc.identifier.issn | 1931-7573 | |
dc.identifier.issn | 1556-276X | |
dc.identifier.doi | 10.1186/s11671-019-2870-9 | |
dc.identifier.uri | http://hdl.handle.net/10754/631020 | |
dc.description.abstract | In this work, we demonstrated the direct growth of GaN nanowires on indium tin oxide (ITO)-coated fused silica substrate. The nanowires were grown catalyst-free using plasma-assisted molecular beam epitaxy (PA-MBE). The effect of growth condition on the morphology and quality of the nanowires is systematically investigated. Structural characterization indicates that the nanowires grow in the (0001) direction directly on top of the ITO layer perpendicular to the substrate plane. Optical characterization of the nanowires shows that yellow luminescence is absent from the nanowire's photoluminescence response, attributed to the low number of defects. Conductive atomic force microscopy (C-AFM) measurement on n-doped GaN nanowires shows good conductivity for individual nanowires, which confirms the potential of using this platform for novel device applications. By using a relatively low-temperature growth process, we were able to successfully grow high-quality single-crystal GaN material without the degradation of the underlying ITO layer. | |
dc.description.sponsorship | Acknowledgements: We would like to thank Dr. Daliang Zhang and Dr. Nini Wei from KAUST’s Imaging and Characterization Core Lab for the assistance during the TEM sample preparation and measurement. Funding: We acknowledge the financial support from the King Abdulaziz City for Science and Technology (KACST) under Grant No. KACST TIC R2-FP-008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding No. BAS/1/1614-01-01 and MBE equipment funding No. C/M-20000-12-001-77. | |
dc.publisher | Springer Nature | |
dc.relation.url | https://nanoscalereslett.springeropen.com/articles/10.1186/s11671-019-2870-9 | |
dc.rights | This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. | |
dc.rights.uri | http://creativecommons.org/licenses/by/4.0/ | |
dc.subject | silica | |
dc.subject | Nanowires | |
dc.subject | Indium Tin Oxide | |
dc.subject | Gallium Nitride | |
dc.title | Direct Growth of Single Crystalline GaN Nanowires on Indium Tin Oxide-Coated Silica | |
dc.type | Article | |
dc.contributor.department | Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division | |
dc.contributor.department | Electrical Engineering Program | |
dc.contributor.department | Imaging and Characterization Core Lab | |
dc.contributor.department | Photonics Laboratory | |
dc.contributor.department | Physical Characterization | |
dc.identifier.journal | Nanoscale Research Letters | |
dc.eprint.version | Publisher's Version/PDF | |
kaust.person | Prabaswara, Aditya | |
kaust.person | Min, Jung-Wook | |
kaust.person | Subedi, Ram | |
kaust.person | Tangi, Malleswararao | |
kaust.person | Holguin Lerma, Jorge Alberto | |
kaust.person | Zhao, Chao | |
kaust.person | Priante, Davide | |
kaust.person | Ng, Tien Khee | |
kaust.person | Ooi, Boon S. | |
kaust.grant.number | BAS/1/1614-01-01 | |
refterms.dateFOA | 2019-02-10T08:56:15Z | |
dc.date.published-online | 2019-02-05 | |
dc.date.published-print | 2019-12 |
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