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dc.contributor.authorPrabaswara, Aditya
dc.contributor.authorMin, Jung-Wook
dc.contributor.authorSubedi, Ram
dc.contributor.authorTangi, Malleswararao
dc.contributor.authorHolguin Lerma, Jorge Alberto
dc.contributor.authorZhao, Chao
dc.contributor.authorPriante, Davide
dc.contributor.authorNg, Tien Khee
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2019-02-10T08:15:55Z
dc.date.available2019-02-10T08:15:55Z
dc.date.issued2019-02-05
dc.identifier.citationPrabaswara A, Min J-W, Subedi RC, Tangi M, Holguin-Lerma JA, et al. (2019) Direct Growth of Single Crystalline GaN Nanowires on Indium Tin Oxide-Coated Silica. Nanoscale Research Letters 14. Available: http://dx.doi.org/10.1186/s11671-019-2870-9.
dc.identifier.issn1931-7573
dc.identifier.issn1556-276X
dc.identifier.doi10.1186/s11671-019-2870-9
dc.identifier.urihttp://hdl.handle.net/10754/631020
dc.description.abstractIn this work, we demonstrated the direct growth of GaN nanowires on indium tin oxide (ITO)-coated fused silica substrate. The nanowires were grown catalyst-free using plasma-assisted molecular beam epitaxy (PA-MBE). The effect of growth condition on the morphology and quality of the nanowires is systematically investigated. Structural characterization indicates that the nanowires grow in the (0001) direction directly on top of the ITO layer perpendicular to the substrate plane. Optical characterization of the nanowires shows that yellow luminescence is absent from the nanowire's photoluminescence response, attributed to the low number of defects. Conductive atomic force microscopy (C-AFM) measurement on n-doped GaN nanowires shows good conductivity for individual nanowires, which confirms the potential of using this platform for novel device applications. By using a relatively low-temperature growth process, we were able to successfully grow high-quality single-crystal GaN material without the degradation of the underlying ITO layer.
dc.description.sponsorshipAcknowledgements: We would like to thank Dr. Daliang Zhang and Dr. Nini Wei from KAUST’s Imaging and Characterization Core Lab for the assistance during the TEM sample preparation and measurement. Funding: We acknowledge the financial support from the King Abdulaziz City for Science and Technology (KACST) under Grant No. KACST TIC R2-FP-008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding No. BAS/1/1614-01-01 and MBE equipment funding No. C/M-20000-12-001-77.
dc.publisherSpringer Nature
dc.relation.urlhttps://nanoscalereslett.springeropen.com/articles/10.1186/s11671-019-2870-9
dc.rightsThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.subjectsilica
dc.subjectNanowires
dc.subjectIndium Tin Oxide
dc.subjectGallium Nitride
dc.titleDirect Growth of Single Crystalline GaN Nanowires on Indium Tin Oxide-Coated Silica
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentPhotonics Laboratory
dc.contributor.departmentPhysical Characterization
dc.identifier.journalNanoscale Research Letters
dc.eprint.versionPublisher's Version/PDF
kaust.personPrabaswara, Aditya
kaust.personMin, Jung-Wook
kaust.personSubedi, Ram
kaust.personTangi, Malleswararao
kaust.personHolguin Lerma, Jorge Alberto
kaust.personZhao, Chao
kaust.personPriante, Davide
kaust.personNg, Tien Khee
kaust.personOoi, Boon S.
kaust.grant.numberBAS/1/1614-01-01
refterms.dateFOA2019-02-10T08:56:15Z
dc.date.published-online2019-02-05
dc.date.published-print2019-12


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This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
Except where otherwise noted, this item's license is described as This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.