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dc.contributor.authorZhang, Chendong
dc.contributor.authorWang, Cong
dc.contributor.authorYang, Feng
dc.contributor.authorHuang, Jing-Kai
dc.contributor.authorLi, Lain-Jong
dc.contributor.authorYao, Wang
dc.contributor.authorJi, Wei
dc.contributor.authorShih, Chih-Kang
dc.date.accessioned2019-02-10T08:15:26Z
dc.date.available2019-02-10T08:15:26Z
dc.date.issued2019-02-11
dc.identifier.citationZhang C, Wang C, Yang F, Huang J-K, Li L-J, et al. (2019) Engineering Point Defect States in Monolayer WSe2. ACS Nano. Available: http://dx.doi.org/10.1021/acsnano.8b07595.
dc.identifier.issn1936-0851
dc.identifier.issn1936-086X
dc.identifier.doi10.1021/acsnano.8b07595
dc.identifier.urihttp://hdl.handle.net/10754/631017
dc.description.abstractDefect engineering is a key approach for tailoring the properties of the emerging two-dimensional semiconductors. Here, we report an atomic engineering of the W vacancy in monolayer WSe2 by single potassium atom decoration. The K decoration alters the energy states and reshapes the wave-function such that previously hidden mid-gap states become visible with well-resolved multiplets in scanning tunneling spectroscopy. Their energy levels are in good agreement with first principle calculations. More interestingly, the calculations show that an unpaired electron donated by the K atom can lead to a local magnetic moment, exhibiting an on-off switching by the odd-even number of electron filling. Experimentally the Fermi level is pinned above all defect states due to the graphite substrate, corresponding to an off state. The close agreement between theory and experiment in the off state, on the other hand, suggest a possibility of gate-programmable magnetic moments at the defects.
dc.description.sponsorshipThis work was supported by the National Key R&D Program of China (Grant No. 2018FYA0305800), the National Natural Science Foundation of China (Grant No. 11774268, 11622437 and 61674171), the US National Science Foundation (DMR-1306878, DMR-1720595, DMR-1808751 and EFMA-1542747), the Welch Foundation (F-1672), the KAUST (Saudi Arabia), the Academia Sinica (Taiwan) and AOARD-134137 (USA), the Croucher Foundation (Croucher Innovation Award), the RGC of HKSAR (C7036-17W), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB30000000), the Fundamental Research Funds for the Central Universities of China and the Research Funds of Renmin University of China (Grant No. 16XNLQ01). C.W. was supported by the Outstanding Innovative Talents Cultivation Funded Programs 2017 of Renmin University of China. Calculations were performed at the Physics Lab of High-Performance Computing of Renmin University of China and the Shanghai Supercomputer Center.
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttps://pubs.acs.org/doi/10.1021/acsnano.8b07595
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher.
dc.subjecttransition metal dichalcogenides
dc.subjectdefect engineering
dc.subjectmid-gap defect states
dc.subjectlocal magnetic moment
dc.subjectspin splitting
dc.titleEngineering Point Defect States in Monolayer WSe2
dc.typeArticle
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalACS Nano
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Physics, University of Texas at Austin, Austin, TX 78712, USA.
dc.contributor.institutionSchool of Physics and Technology, Wuhan University, Wuhan 430072, China.
dc.contributor.institutionDepartment of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing 100872, China.
dc.contributor.institutionDepartment of Physics and Center of Theoretical and Computational Physics, University of Hong Kong, Hong Kong, China.
kaust.personHuang, Jing-Kai
kaust.personLi, Lain-Jong
refterms.dateFOA2020-01-20T00:00:00Z


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