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dc.contributor.authorZhang, Huafan
dc.contributor.authorEbaid, Mohamed
dc.contributor.authorTan, Jeremy
dc.contributor.authorLiu, Guangyu
dc.contributor.authorMin, Jungwook
dc.contributor.authorNg, Tien Khee
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2019-01-29T11:18:05Z
dc.date.available2019-01-29T11:18:05Z
dc.date.issued2019-01-28
dc.identifier.citationZhang, H., Ebaid, M., Tan, J., Liu, G., Min, J.-W., Ng, T. K., & Ooi, B. S. (2019). Improved solar hydrogen production by engineered doping of InGaN/GaN axial heterojunctions. Optics Express, 27(4), A81. doi:10.1364/oe.27.000a81
dc.identifier.issn1094-4087
dc.identifier.doi10.1364/oe.27.000a81
dc.identifier.urihttp://hdl.handle.net/10754/630957
dc.description.abstractInGaN-based nanowires (NWs) have been investigated as efficient photoelectrochemical (PEC) water splitting devices. In this work, the InGaN/GaN NWs were grown by molecular beam epitaxy (MBE) having InGaN segments on top of GaN seeds. Three axial heterojunction structures were constructed with different doping types and levels, namely n-InGaN/n-GaN NWs, undoped (u)-InGaN/p-GaN NWs, and p-InGaN/p-GaN NWs. With the carrier concentrations estimated by Mott–Schottky measurements, a PC1D simulation further confirmed the band structures of the three heterojunctions. The u-InGaN/p-GaN and p-InGaN/p-GaN NWs exhibited optimized stability in pH 0 electrolytes for over 10 h with a photocurrent density of about –4.0 and –9.4 mA/cm2, respectively. However, the hydrogen and oxygen evolution rates of the Pt-treated u-InGaN/p-GaN NWs exhibited a less favorable stoichiometric ratio. On the other hand, the Pt-decorated p-InGaN/p-GaN NWs showed the best PEC performance, generating approximately 1000 µmol/cm2 hydrogen and 550 µmol/cm2 oxygen in 10 h. The band-engineered p-InGaN/p-GaN axial NWs-heterojunction demonstrated a great potential for highly efficient and durable photocathodes.
dc.publisherThe Optical Society
dc.rights© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
dc.titleImproved solar hydrogen production by engineered doping of InGaN/GaN axial heterojunctions
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.identifier.journalOptics Express
dc.eprint.versionPublisher's Version/PDF
kaust.personZhang, Huafan
kaust.personLiu, Guangyu
kaust.personNg, Tien Khee
kaust.personOoi, Boon S.
refterms.dateFOA2019-01-29T11:24:58Z
dc.date.published-online2019-01-28
dc.date.published-print2019-02-18


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