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dc.contributor.authorWang, Nan
dc.contributor.authorChen, Shujing
dc.contributor.authorNkansah, Amos
dc.contributor.authorWang, Qianlong
dc.contributor.authorWang, Xitao
dc.contributor.authorChen, Miaoxiang
dc.contributor.authorYe, Lilei
dc.contributor.authorLiu, Johan
dc.date.accessioned2019-01-22T12:36:05Z
dc.date.available2019-01-22T12:36:05Z
dc.date.issued2018-12-31
dc.identifier.citationWang N, Chen S, Nkansah A, Wang Q, Wang X, et al. (2018) Vertically Aligned Graphene-based Thermal Interface Material with High Thermal Conductivity. 2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC). Available: http://dx.doi.org/10.1109/therminic.2018.8593303.
dc.identifier.doi10.1109/therminic.2018.8593303
dc.identifier.urihttp://hdl.handle.net/10754/630935
dc.description.abstractHigh density packaging in combination with increased transistor integration inevitably leads to challenging power densities in terms of thermal management. Here, a novel highly thermal conductive and lightweight graphene based thermal interface materials (GT) was developed for thermal management in power devices. Composed by vertically graphene structures, GTs provide a continuous high thermal conductivity phase along the path of thermal transport, which lead to outstanding thermal properties. The highest through-plane thermal conductivity GTs reaches to 1000 W/mK, which is orders of magnitude higher than conventional TIMs, and even outperforms the pure indium by over ten times. In addition, a thin layer of indium metal that coated on the surface of GTs can easily form alloys with many other metals at a relatively low reflow temperature. Therefore, GTs, as an excellent TIM, can provide complete physical contact between two surfaces with minimized the contact resistance. The measured total thermal resistance and effective thermal conductivity by using 300 m thick GTs as TIM between two copper blocks reaches to ~ 3.7 Kmm2 /W and ~ 90 W/mK, respectively. Such values are significantly higher than the randomly dispersed composites presented above, and show even better thermal performance than pure indium bonding. In addition, GTs has more advantages than pure indium bonding, including low weight (density < 2 g/cm3), low complexity during assembly and maintainability. The resulting GTs thus opens new opportunities for addressing large heat dissipation issues in form-factor driven electronics and other high power driven systems.
dc.description.sponsorshipWe thank for the financial support from the Swedish Foundation for Strategic Research (SSF) under contract (Nos SE13–0061, GMT14–0045), Swedish National Board for Innovation (Vinnova) Graphene SIO-Agenda Program, Formas program on graphene enhanced composite as well as from the Production Area of Advance at Chalmers University of Technology, Sweden. Thanks for the financial support by the Ministry of Science and Technology of China with the contract No: YS2017YFGX020059 and Shanghai Municipal Education Commission (Shanghai University High Education Peak Discipline Program).
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.urlhttps://ieeexplore.ieee.org/document/8593303
dc.titleVertically Aligned Graphene-based Thermal Interface Material with High Thermal Conductivity
dc.typeConference Paper
dc.contributor.departmentCleanroom Operations
dc.contributor.departmentEtch
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentNanofabrication Core Lab
dc.contributor.departmentPatterning
dc.contributor.departmentThin Films & Characterization
dc.identifier.journal2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)
dc.contributor.institutionSHT Smart High Tech AB, Hugo Grauers gata 3B, SE-411 33 Göteborg, Sweden.
dc.contributor.institutionSMIT Center, School of Automation and Mechanical Engineering, Shanghai University, 20, Changzhong Rd., Shanghai 201800, China.
dc.contributor.institutionShenzhen Shen Rui Graphene Co Ltd, Baoan District, Shenzhen City, China.
dc.contributor.institutionElectronics Materials and Systems Laboratory (EMSL), Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, Kemivägen 9, SE-412 96 Göteborg, Sweden.
kaust.personChen, Miaoxiang
dc.date.published-online2018-12-31
dc.date.published-print2018-09


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