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dc.contributor.authorOoi, Boon S.
dc.contributor.authorZhao, Chao
dc.contributor.authorNg, Tien Khee
dc.date.accessioned2019-01-20T12:07:10Z
dc.date.available2019-01-20T12:07:10Z
dc.date.issued2018-08-29
dc.date.submitted2016-10-07
dc.identifier.urihttp://hdl.handle.net/10754/630908
dc.description.abstractElemental or compound semiconductors on metal substrates and methods of growing them are provided. The methods can include the steps of: (i) providing a metal substrate; (ii) adding an interlayer on a surface of the metal substrate, and (iii) growing semiconductor nanowires on the interlayer using a semiconductor epitaxy growth system to form the elemental or compound semiconductor. The method can include direct growth of high quality group III-V and group III-N based materials in the form of nanowires and nanowires-based devices on metal substrates. The nanowires on all- metal scheme greatly simplifies the fabrication process of nanowires based high power light emitters.
dc.relation.urlhttps://patents.google.com/patent/EP3365480A1/de
dc.titleNanowires-based light emitters on thermally and electrically conductive substrates and of making same
dc.typePatent
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentPhysical Characterization
dc.description.statusPublished Application
kaust.personOoi, Boon S.
kaust.personZhao, Chao
kaust.personNg, Tien Khee
dc.contributor.assigneeKing Abdullah University Of Science And Technology
dc.identifier.applicationnumberWO2017068450A1
dc.identifier.applicationnumberEP3365480A1
dc.identifier.applicationnumberUS20180261455A1
refterms.dateFOA2019-01-20T12:07:17Z


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