Integrated circuit manufacturing for low-profile and flexible devices
Type
PatentPatent Status
Granted PatentKAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Date
2013-01-17Submitted Date
2012-07-11Permanent link to this record
http://hdl.handle.net/10754/630905
Metadata
Show full item recordAbstract
[0040) A process for manufacturing low-profile and flexible integrated circuits includes manufacturing an integrated circuit on a wafer having a thickness larger than the desired thickness. After the integrated circuit is manufactured the integrated circuit may be released with a portion of the wafer leaving a remainder of the bulk portion of the wafer. A second integrated circuit may be manufactured on the remainder of the wafer and the process repeated to manufacture additional integrated circuits from a single wafer. The integrated circuits may be released from the wafer by etching vias through the integrated circuit and into the wafer. The via may be used to start an etch process inside the wafer that undercuts the integrated circuit separating the integrated circuit from the wafer.Patent Number
US9209083B2Application Number
US20140141571A1WO2013009833A1