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dc.contributor.authorLy, Jack T.
dc.contributor.authorBurnett, Edmund K.
dc.contributor.authorThomas, Simil
dc.contributor.authorAljarb, Areej
dc.contributor.authorLiu, Yao
dc.contributor.authorPark, Soohyung
dc.contributor.authorRosa, Stephen
dc.contributor.authorYi, Yeonjin
dc.contributor.authorLee, Hyunbok
dc.contributor.authorEmrick, Todd
dc.contributor.authorRussell, Thomas P.
dc.contributor.authorBredas, Jean-Luc
dc.contributor.authorBriseno, Alejandro L.
dc.date.accessioned2018-12-31T13:50:31Z
dc.date.available2018-12-31T13:50:31Z
dc.date.issued2018-10-31
dc.identifier.citationLy JT, Burnett EK, Thomas S, Aljarb A, Liu Y, et al. (2018) Efficient Electron Mobility in an All-Acceptor Napthalenediimide-Bithiazole Polymer Semiconductor with Large Backbone Torsion. ACS Applied Materials & Interfaces 10: 40070–40077. Available: http://dx.doi.org/10.1021/acsami.8b11234.
dc.identifier.issn1944-8244
dc.identifier.issn1944-8252
dc.identifier.doi10.1021/acsami.8b11234
dc.identifier.urihttp://hdl.handle.net/10754/630600
dc.description.abstractAn all-acceptor napthalenediimide-bithiazole-based co-polymer, P(NDI2OD-BiTz), was synthesized and characterized for application in thin-film transistors. Density functional theory calculations point to an optimal perpendicular dihedral angle of 90° between acceptor units along isolated polymer chains; yet optimized transistors yield electron mobility of 0.11 cm2/(V s) with the use of a zwitterionic naphthalene diimide interlayer. Grazing incidence X-ray diffraction measurements of annealed films reveal that P(NDI2OD-BiTz) adopts a highly ordered edge-on orientation, exactly opposite to similar bithiophene analogs. This report highlights an NDI and thiazole all-acceptor polymer and demonstrates high electron mobility despite its nonplanar backbone conformation.
dc.description.sponsorshipWe acknowledge the Office of Naval Research (Awards N00014-16-1-2612 and N000147-14-1-0053 at Penn State and Award N00014-17-1-2208 at Georgia Tech). Y.L. and T.P.R. were supported by the Office of Naval Research, Materials Division, under contract N00014-17-1-2244. This work is based upon research conducted at the Cornell High Energy Synchrotron Source (CHESS), which is supported by the National Science Foundation under award DMR1332208. We would like to also thank Megan Matta and Sarah Sheffield, graduate students of Penn State, for conducting TGA and DSC measurements provided in the SI.
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttps://pubs.acs.org/doi/10.1021/acsami.8b11234
dc.subjectAnnealing
dc.subjectSemiconductor
dc.subjectThiazole
dc.subjectN-type
dc.subjectNaphthalene Diimide
dc.subjectAll-acceptor
dc.titleEfficient Electron Mobility in an All-Acceptor Napthalenediimide-Bithiazole Polymer Semiconductor with Large Backbone Torsion
dc.typeArticle
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentLaboratory for Computational and Theoretical Chemistry of Advanced Materials
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalACS Applied Materials & Interfaces
dc.contributor.institutionDepartment of Polymer Science and Engineering, University of Massachusetts, 120 Governors Drive, Amherst, Massachusetts 01003, United States
dc.contributor.institutionSchool of Chemistry and Biochemistry, Center for Organic Photonics and Electronics (COPE), Georgia Institute of Technology, Atlanta, Georgia 30332-0400, United States
dc.contributor.institutionInstitute of Physics and Applied Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
dc.contributor.institutionDepartment of Physics, Kangwon National University, 1 Gangwondaehak-gil, Chuncheon-si, Gangwon-do 24341, Republic of Korea
dc.contributor.institutionDepartment of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16803, United States
kaust.personAljarb, Areej
kaust.personBredas, Jean-Luc
dc.date.published-online2018-10-31
dc.date.published-print2018-11-21


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