P-Type SnO Thin Film Phototransistor with Perovskite-Mediated Photogating
KAUST DepartmentFunctional Nanomaterials and Devices Research Group
Laboratory of Nano Oxides for Sustainable Energy
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/630569
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AbstractA p-type phototransistor based on tin monoxide (SnO) thin film and a perovskite-mediated photogating effect to enhance the device performance are reported. Without the perovskite layer, the SnO thin film phototransistor exhibits a good figure of merit including on/off ratio (Ion/Ioff) over 103, hole mobility of 3.55 cm2 V−1 s−1, photoresponsivity of 1.83 × 103 A W−1, and detectivity of 2.11 × 1013 Jones at 655 nm; these values are among the highest reported for oxide-based devices. Furthermore, it is shown that when a hybrid perovskite MAPbI3 overlayer is deposited on the p-type SnO channel, the phototransistor behavior is significantly modified. Specifically, the field-effect mobility increases to 5.53 cm2 V−1 s−1 and the on/off ratio increases to 2.7 × 103 compared with an on/off ratio of 519 under dark. These effects can be ascribed to a perovskite-mediated photogating effect with favorable band alignment and interfacial charge transfer. This work not only introduces SnO as a new p-type phototransistor material but also presents a general approach to enhance the channel transport via coating a photoactive perovskite overlayer.
CitationGuan X, Wang Z, Hota MK, Alshareef HN, Wu T (2018) P-Type SnO Thin Film Phototransistor with Perovskite-Mediated Photogating. Advanced Electronic Materials: 1800538. Available: http://dx.doi.org/10.1002/aelm.201800538.
SponsorsX.G. and Z.W. contributed equally to this work. The research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST).
JournalAdvanced Electronic Materials