Experimental and Simulation Study of Resistive Switching Properties in Novel Cu/Poly-Si/TiN CBRAM Crossbar Device
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Online Publication Date2018-09-07
Print Publication Date2018-03
Permanent link to this recordhttp://hdl.handle.net/10754/630567
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AbstractIn this work we demonstrate the uniform resistive switching (RS) behavior of Cu/Poly-Si/TiN CBRAM crossbar structure device. A significant improvement in endurance is demonstrated in Poly-Si CBRAM device compared to Silicon dioxide (SiO) based device. The Cu/Poly-Si/TiN CBRAM device exhibits excellent memory performance, such as high ON/OFF resistance ratio, high endurance and good retention time (10 s). In addition to the experimental study, this work presents a numerical model for the Cu/Poly-Si/TiN CBRAM device. The simulation results based on this model perfectly match the experimental measurements.
CitationChand U, Berco D, Li R, Alawein M, Fariborzi H (2018) Experimental and Simulation Study of Resistive Switching Properties in Novel Cu/Poly-Si/TiN CBRAM Crossbar Device. 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM). Available: http://dx.doi.org/10.1109/EDTM.2018.8421452.
Conference/Event name2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018