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    Recent Advances in van der Waals Heterojunctions Based on Semiconducting Transition Metal Dichalcogenides

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    Type
    Article
    Authors
    Li, Ruiping
    Li, Lain-Jong cc
    Cheng, Yingchun
    Huang, Wei
    KAUST Department
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2018-09-10
    Online Publication Date
    2018-09-10
    Print Publication Date
    2018-11
    Permanent link to this record
    http://hdl.handle.net/10754/630549
    
    Metadata
    Show full item record
    Abstract
    Due to the direct bandgap with coupled spin–valley physics, semiconducting MX (M = Mo, W; X = S, Se) materials have attracted considerable attention and have numerous proposed applications. With the development of 2D materials research, many 2D materials have been discovered, such as insulators, semiconductors, ferromagnetic semiconductors, topological insulators, metals, and ferromagnetic metals. van der Waals heterojunctions (vdWHs), based on MX and other 2D materials, have attracted increasing attention because of their various potential applications, such as field effect transistors, solar cells, photodetectors, light emitting diodes, and lasers. Based on the functionality of 2D materials, vdWHs are classified into six classes: MX/semiconductors, MX/insulators, MX/topological insulators, MX/ferromagnetic semiconductors, MX/metals, and MX/ferromagnetic metals. For each class of vdWHs, the structural, electronic, and optical properties, as well as potential applications in electronics and optoelectronics, are reviewed. Finally, an overview of perspectives and challenges regarding vdWHs based on MX materials is presented.
    Citation
    Li R, Li L-J, Cheng Y, Huang W (2018) Recent Advances in van der Waals Heterojunctions Based on Semiconducting Transition Metal Dichalcogenides. Advanced Electronic Materials 4: 1800270. Available: http://dx.doi.org/10.1002/aelm.201800270.
    Sponsors
    This work was financially supported by the National Natural Science Foundation of China (Grant Nos. 11504169, 61575094, and 91733302), the National Basic Research Program of China (Grant No. 2015CB932200). This work was also sponsored by Qing Lan Project and the Jiangsu Specially-Appointed Professor programme.
    Publisher
    Wiley
    Journal
    Advanced Electronic Materials
    DOI
    10.1002/aelm.201800270
    Additional Links
    https://onlinelibrary.wiley.com/doi/full/10.1002/aelm.201800270
    ae974a485f413a2113503eed53cd6c53
    10.1002/aelm.201800270
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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