Recent Advances in van der Waals Heterojunctions Based on Semiconducting Transition Metal Dichalcogenides
KAUST DepartmentMaterial Science and Engineering Program
Physical Science and Engineering (PSE) Division
Online Publication Date2018-09-10
Print Publication Date2018-11
Permanent link to this recordhttp://hdl.handle.net/10754/630549
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AbstractDue to the direct bandgap with coupled spin–valley physics, semiconducting MX (M = Mo, W; X = S, Se) materials have attracted considerable attention and have numerous proposed applications. With the development of 2D materials research, many 2D materials have been discovered, such as insulators, semiconductors, ferromagnetic semiconductors, topological insulators, metals, and ferromagnetic metals. van der Waals heterojunctions (vdWHs), based on MX and other 2D materials, have attracted increasing attention because of their various potential applications, such as field effect transistors, solar cells, photodetectors, light emitting diodes, and lasers. Based on the functionality of 2D materials, vdWHs are classified into six classes: MX/semiconductors, MX/insulators, MX/topological insulators, MX/ferromagnetic semiconductors, MX/metals, and MX/ferromagnetic metals. For each class of vdWHs, the structural, electronic, and optical properties, as well as potential applications in electronics and optoelectronics, are reviewed. Finally, an overview of perspectives and challenges regarding vdWHs based on MX materials is presented.
CitationLi R, Li L-J, Cheng Y, Huang W (2018) Recent Advances in van der Waals Heterojunctions Based on Semiconducting Transition Metal Dichalcogenides. Advanced Electronic Materials 4: 1800270. Available: http://dx.doi.org/10.1002/aelm.201800270.
SponsorsThis work was financially supported by the National Natural Science Foundation of China (Grant Nos. 11504169, 61575094, and 91733302), the National Basic Research Program of China (Grant No. 2015CB932200). This work was also sponsored by Qing Lan Project and the Jiangsu Specially-Appointed Professor programme.
JournalAdvanced Electronic Materials