Irradiation effects on the structural and optical properties of single crystal β-Ga2O3
KAUST DepartmentPhysical Science and Engineering (PSE) Division
Online Publication Date2018-08-23
Print Publication Date2018-09-01
Permanent link to this recordhttp://hdl.handle.net/10754/630543
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AbstractIn the present work, we report the 25 MeV oxygen irradiation effects in n-type single crystal β-GaO at different fluences. We demonstrate that the symmetric stretching modes and bending vibrations of GaO and GaO units are impaired upon increasing O irradiation fluence. Blue and green photoluminescence (PL) emission bands are found to be mainly associated with gallium-oxygen divacancies, gallium vacancies and oxygen interstitials. The increase of optically active centers at low fluence and the PL quenching at high fluence are ascribed to the reduction of carrier density and the production of non-radiative recombination centers, respectively. The results envisage the possibility of obtaining pre-designed spectral behaviors by varying the oxygen irradiation fluence.
CitationLiu C, Berencén Y, Yang J, Wei Y, Wang M, et al. (2018) Irradiation effects on the structural and optical properties of single crystal β-Ga2O3. Semiconductor Science and Technology 33: 095022. Available: http://dx.doi.org/10.1088/1361-6641/aad8d1.
SponsorsThis work is supported by Science Challenge Project (No. TZ2018004), National Natural Science Foundation of China (No. 11775061 and No. 11205038) and the 111 Project under Grant No. B18017. The author CL (No. 201706125070) thanks financial support by Chinese Scholarship Council. The author YB thanks the Alexander-von-Humboldt foundation for providing a postdoctoral fellowship. The support by Joerg Grenzer for XRD measurements is gratefully acknowledged.