• Login
    View Item 
    •   Home
    • Research
    • Articles
    • View Item
    •   Home
    • Research
    • Articles
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Browse

    All of KAUSTCommunitiesIssue DateSubmit DateThis CollectionIssue DateSubmit Date

    My Account

    Login

    Quick Links

    Open Access PolicyORCID LibguidePlumX LibguideSubmit an Item

    Statistics

    Display statistics

    Irradiation effects on the structural and optical properties of single crystal β-Ga2O3

    • CSV
    • RefMan
    • EndNote
    • BibTex
    • RefWorks
    Type
    Article
    Authors
    Liu, Chaoming
    Berencén, Yonder
    Yang, Jianqun
    Wei, Yidan
    Wang, Mao
    Yuan, Ye
    Xu, Chi
    Xie, Yufang
    Li, Xingji
    Zhou, Shengqiang
    KAUST Department
    Physical Science and Engineering (PSE) Division
    Date
    2018-08-23
    Online Publication Date
    2018-08-23
    Print Publication Date
    2018-09-01
    Permanent link to this record
    http://hdl.handle.net/10754/630543
    
    Metadata
    Show full item record
    Abstract
    In the present work, we report the 25 MeV oxygen irradiation effects in n-type single crystal β-GaO at different fluences. We demonstrate that the symmetric stretching modes and bending vibrations of GaO and GaO units are impaired upon increasing O irradiation fluence. Blue and green photoluminescence (PL) emission bands are found to be mainly associated with gallium-oxygen divacancies, gallium vacancies and oxygen interstitials. The increase of optically active centers at low fluence and the PL quenching at high fluence are ascribed to the reduction of carrier density and the production of non-radiative recombination centers, respectively. The results envisage the possibility of obtaining pre-designed spectral behaviors by varying the oxygen irradiation fluence.
    Citation
    Liu C, Berencén Y, Yang J, Wei Y, Wang M, et al. (2018) Irradiation effects on the structural and optical properties of single crystal β-Ga2O3. Semiconductor Science and Technology 33: 095022. Available: http://dx.doi.org/10.1088/1361-6641/aad8d1.
    Sponsors
    This work is supported by Science Challenge Project (No. TZ2018004), National Natural Science Foundation of China (No. 11775061 and No. 11205038) and the 111 Project under Grant No. B18017. The author CL (No. 201706125070) thanks financial support by Chinese Scholarship Council. The author YB thanks the Alexander-von-Humboldt foundation for providing a postdoctoral fellowship. The support by Joerg Grenzer for XRD measurements is gratefully acknowledged.
    Publisher
    IOP Publishing
    Journal
    Semiconductor Science and Technology
    DOI
    10.1088/1361-6641/aad8d1
    Additional Links
    http://iopscience.iop.org/article/10.1088/1361-6641/aad8d1/meta
    ae974a485f413a2113503eed53cd6c53
    10.1088/1361-6641/aad8d1
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division

    entitlement

     
    DSpace software copyright © 2002-2021  DuraSpace
    Quick Guide | Contact Us | Send Feedback
    Open Repository is a service hosted by 
    Atmire NV
     

    Export search results

    The export option will allow you to export the current search results of the entered query to a file. Different formats are available for download. To export the items, click on the button corresponding with the preferred download format.

    By default, clicking on the export buttons will result in a download of the allowed maximum amount of items. For anonymous users the allowed maximum amount is 50 search results.

    To select a subset of the search results, click "Selective Export" button and make a selection of the items you want to export. The amount of items that can be exported at once is similarly restricted as the full export.

    After making a selection, click one of the export format buttons. The amount of items that will be exported is indicated in the bubble next to export format.