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dc.contributor.authorZainal, N.
dc.contributor.authorSamsudin, M.E.A.
dc.contributor.authorTaib, Muhamad Ikram Md
dc.contributor.authorAhmad, M.A.
dc.contributor.authorAriff, A.
dc.contributor.authorAlwadai, Norah M.
dc.contributor.authorRoqan, Iman S.
dc.date.accessioned2018-12-31T13:35:31Z
dc.date.available2018-12-31T13:35:31Z
dc.date.issued2018-07-25
dc.identifier.citationZainal N, Samsudin MEA, Taib MIM, Ahmad MA, Ariff A, et al. (2018) Freestanding patterned polycrystalline GaN substrate by a straightforward and affordable technique. Materials Science in Semiconductor Processing 88: 40–44. Available: http://dx.doi.org/10.1016/j.mssp.2018.07.029.
dc.identifier.issn1369-8001
dc.identifier.doi10.1016/j.mssp.2018.07.029
dc.identifier.urihttp://hdl.handle.net/10754/630534
dc.description.abstractA new process for producing a freestanding patterned polycrystalline GaN substrate by applying a straightforward and affordable technique is presented here. Such substrate was fabricated by depositing ~ 50 µm thick bulk GaN layer on porous Si/Si substrate by e-beam evaporator with successive ammonia annealing to improve the material quality of the GaN layer. The GaN layer was then separated from the porous Si/Si substrate by immersing in an acidic solution. The surface of the freestanding patterned polycrystalline GaN substrate that was in contact with the porous Si/Si substrate consisted of cubic-like structures, as inherited from the porous Si/Si substrate. Although the cubic-like structures were almost uniformly distributed on the surface, they were formed in various heights due to irregular degree of symmetry of the porous Si/Si substrate. X-ray diffraction results suggested that β-Ga2O3 inclusions are inside the freestanding patterned polycrystalline GaN substrate but not on its surface. This was supported by micro-photoluminecsence (PL) measurement, whereby only the GaN PL signals were observed. Furthermore, Raman spectroscopy revealed a small amount of compressive stress (0.23 GPa), suggesting that the substrate was almost relaxed.
dc.description.sponsorshipThis work was conducted under Fundamental Research Grant Scheme (203/CINOR/ 6711562), MOSTI e-Science Fund (305/CINOR/613618) and Universiti Sains Malaysia-Research University Individual (1001/CINOR/8014033).
dc.publisherElsevier BV
dc.relation.urlhttp://www.sciencedirect.com/science/article/pii/S136980011830920X
dc.titleFreestanding patterned polycrystalline GaN substrate by a straightforward and affordable technique
dc.typeArticle
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentSemiconductor and Material Spectroscopy (SMS) Laboratory
dc.identifier.journalMaterials Science in Semiconductor Processing
dc.contributor.institutionInstitute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800 Penang, Malaysia
kaust.personAlwadai, Norah Mohammed Mosfer
kaust.personRoqan, Iman S.
dc.date.published-online2018-07-25
dc.date.published-print2018-12


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