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    Lateral-Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence

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    Type
    Article
    Authors
    Guo, Wei
    Sun, Haiding
    Torre, Bruno
    Li, Junmei
    Sheikhi, Moheb
    Jiang, Jiean
    Li, Hongwei
    Guo, Shiping
    Li, Kuang-Hui
    Lin, Ronghui cc
    Giugni, Andrea
    Di Fabrizio, Enzo M. cc
    Li, Xiaohang cc
    Ye, Jichun
    KAUST Department
    Advanced Semiconductor Laboratory
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Structural Molecular Imaging Light Enhanced Spectroscopies Lab; King Abdullah University of Science and Technology (KAUST); Thuwal 23955-6900 Saudi Arabia
    KAUST Grant Number
    BAS/1/1664-01-01
    OCRF-2014-CRG3-6214038
    ZJUAMIS1704
    Date
    2018-06-08
    Online Publication Date
    2018-06-08
    Print Publication Date
    2018-08
    Permanent link to this record
    http://hdl.handle.net/10754/630493
    
    Metadata
    Show full item record
    Abstract
    Aluminum-gallium-nitride alloys (Al x Ga1– x N, 0 ≤ x ≤ 1) can emit light covering the ultraviolet spectrum from 210 to 360 nm. However, these emitters have not fulfilled their full promise to replace the toxic and fragile mercury UV lamps due to their low efficiencies. This study demonstrates a promising approach to enhancing the luminescence efficiency of AlGaN multiple quantum wells (MQWs) via the introduction of a lateral-polarity structure (LPS) comprising both III and N-polar domains. The enhanced luminescence in LPS is attributed to the surface roughening, and compositional inhomogeneities in the N-polar domain. The space-resolved internal quantum efficiency (IQE) mapping shows a higher relative IQE in N-polar domains and near inversion domain boundaries, providing strong evidence of enhanced radiative recombination efficiency in the LPS. These experimental observations are in good agreement with the theoretical calculations, where both lateral and vertical band diagrams are investigated. This work suggests that the introduction of the LPS in AlGaN-based MQWs can provide unprecedented tunability in achieving higher luminescence performance in the development of solid state light sources.
    Citation
    Guo W, Sun H, Torre B, Li J, Sheikhi M, et al. (2018) Lateral-Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence. Advanced Functional Materials 28: 1802395. Available: http://dx.doi.org/10.1002/adfm.201802395.
    Sponsors
    W.G. and H.S. contributed equally to this work. The NIMTE authors acknowledge the support of the National Key Research and Development Program of China (Grant No. 2016YFB0400802), the National Natural Science Foundation of China (Grant No. 61704176), and the Open project of Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications (Grant No. ZJUAMIS1704). The KAUST authors acknowledge the support of the KAUST Baseline BAS/1/1664-01-01, OCRF-2014-CRG3-6214038, and the National Natural Science Foundation of China (Grant No. 61774065). The authors greatly appreciate the help from Prof. Zi-hui Zhang and co-workers of Hebei University of Technology in theoretical band diagram calculations and fruitful discussions on device physics.
    Publisher
    Wiley
    Journal
    Advanced Functional Materials
    DOI
    10.1002/adfm.201802395
    Additional Links
    https://onlinelibrary.wiley.com/doi/full/10.1002/adfm.201802395
    ae974a485f413a2113503eed53cd6c53
    10.1002/adfm.201802395
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Electrical Engineering Program; Material Science and Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

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