Detailed carrier recombination in lateral composition modulation structure
KAUST DepartmentKing Abdullah University of Science and Technology, Thuwal 23955, Kingdom of Saudi Arabia
Online Publication Date2018-08-03
Print Publication Date2018-09-01
Permanent link to this recordhttp://hdl.handle.net/10754/630457
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AbstractCarrier recombination in lateral composition modulation (LCM) GaInP was probed in detail using time-resolved photoluminescence (TR-PL) and transmission electron microscopy (TEM). Upon SiO2 passivation, the time-transient decay of the PL peak was slower, and carrier lifetime was significantly enhanced from 25 to 230 ps for passivated LCM GaInP in comparison with that of bulk GaInP. This is due to the suppressed surface recombination of the irregular and wavy surface of LCM GaInP observed by TEM. Temperature-dependent TR-PL also showed a large decrease in carrier lifetime with an increase in temperature, indicating the dominance of Shockley–Read–Hall recombination due to the nonperiodicity of the LCM structure.
CitationPark K, Ravindran S, Kang S, Min J-W, Hwang H-Y, et al. (2018) Detailed carrier recombination in lateral composition modulation structure. Applied Physics Express 11: 095801. Available: http://dx.doi.org/10.7567/apex.11.095801.
SponsorsWe thank Dr. Cheeleong Tan and Dr. Min-Su Park of Northwestern University for assistance in SiO2 deposition as well as helpful discussion.
PublisherJapan Society of Applied Physics
JournalApplied Physics Express