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dc.contributor.authorPriante, Davide
dc.contributor.authorTangi, Malleswararao
dc.contributor.authorMin, Jung-Wook
dc.contributor.authorAlfaraj, Nasir
dc.contributor.authorLiang, Jian-Wei
dc.contributor.authorSun, Haiding
dc.contributor.authorAlhashim, Hala H.
dc.contributor.authorLi, Xiaohang
dc.contributor.authorAlbadri, Abdulrahman M.
dc.contributor.authorAlyamani, Ahmed Y.
dc.contributor.authorNg, Tien Khee
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2018-12-31T08:57:58Z
dc.date.available2018-12-31T08:57:58Z
dc.date.issued2018-12-18
dc.identifier.citationPriante D, Tangi M, Min J-W, Alfaraj N, Liang JW, et al. (2018) Enhanced electro-optic performance of surface-treated nanowires: origin and mechanism of nanoscale current injection for reliable ultraviolet light-emitting diodes. Optical Materials Express 9: 203. Available: http://dx.doi.org/10.1364/ome.9.000203.
dc.identifier.issn2159-3930
dc.identifier.doi10.1364/ome.9.000203
dc.identifier.urihttp://hdl.handle.net/10754/630376
dc.description.abstractSelf-assembled nanowires are posed to be viable alternatives to conventional planar structures, including the nitride epitaxy for optoelectronic, electronic and nano-energy applications. In many cases, current injection and extraction at the nanoscopic scale are essential for marked improvement at the macroscopic scale. In this investigation, we study the mechanism of nanoscale current injection and the origin of improvement of the flow of charged carriers at the group-III nitride semiconductor surface and metal-semiconductor interfaces. Conductive atomic force microscopy (c-AFM) and Kelvin probe force microscopy (KPFM) enable a rapid analysis of the electrical and morphological properties of single and ensemble nanostructures. The surface potential and current injection of AlGaN nanowire-based LEDs are spatially mapped before and after surface treatment with KOH solution. Treated-nanowires showed an improved current spreading and increased current injection by nearly 10×, reduced sub-turn-on voltage (as low as 5 V), and smaller series resistance. The reduced contact potential confirms the lower semiconductor/metal barrier, thus enabling larger carriers flow, and correlates with the 15% increase in injection efficiency in macroscopic LEDs. The improvement leads to the normalization of nanoscale electrical conducting properties of UV AlGaN-based nanowire-LEDs and lays the foundation for the realization of practical nanowire-based device applications.
dc.description.sponsorshipKing Abdulaziz City for Science and Technology (KACST) (KACST TIC R2-FP-008); King Abdullah University of Science and Technology (KAUST) (BAS/1/1614-01-01, C/M-20000-12-001-77, BAS/1/1664-01-01, URF/1/3437-01-01) GCC Research Council Grant REP/1/3189-01-01; National Natural Science Foundation of China (Grant No. 61774065).
dc.publisherThe Optical Society
dc.relation.urlhttps://www.osapublishing.org/ome/abstract.cfm?uri=ome-9-1-203
dc.rights2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
dc.rights.urihttps://doi.org/10.1364/OA_License_v1
dc.titleEnhanced electro-optic performance of surface-treated nanowires: origin and mechanism of nanoscale current injection for reliable ultraviolet light-emitting diodes
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentPhotonics Laboratory
dc.contributor.departmentAdvanced Semiconductor Laboratory
dc.identifier.journalOptical Materials Express
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionImam Abdulrahman bin Faisal University, Department of Physics, College of Science, Dammam 31441, Saudi Arabia
dc.contributor.institutionNational Center for Nanotechnology, King Abdulaziz City for Science and Technology (KACST), Riyadh, 11442-6086, Saudi Arabia
kaust.authorPriante, Davide
kaust.authorTangi, Malleswararao
kaust.authorMin, Jung-Wook
kaust.authorAlfaraj, Nasir
kaust.authorLiang, Jian-Wei
kaust.authorSun, Haiding
kaust.authorLi, Xiaohang
kaust.authorNg, Tien Khee
kaust.authorOoi, Boon S.
kaust.grant.numberBAS/1/1614-01-01
kaust.grant.numberC/M-20000-12-001-77
kaust.grant.numberBAS/1/1664-01-01
kaust.grant.numberURF/1/3437-01-01
refterms.dateFOA2018-12-31T12:29:07Z


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