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    Enhanced electro-optic performance of surface-treated nanowires: origin and mechanism of nanoscale current injection for reliable ultraviolet light-emitting diodes

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    Type
    Article
    Authors
    Priante, Davide cc
    Tangi, Malleswararao cc
    Min, Jung-Wook
    Alfaraj, Nasir cc
    Liang, Jian Wei cc
    Sun, Haiding
    Alhashim, Hala H.
    Li, Xiaohang cc
    Albadri, Abdulrahman M.
    Alyamani, Ahmed Y.
    Ng, Tien Khee cc
    Ooi, Boon S. cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Photonics Laboratory
    Advanced Semiconductor Laboratory
    KAUST Grant Number
    BAS/1/1614-01-01
    C/M-20000-12-001-77
    BAS/1/1664-01-01
    URF/1/3437-01-01
    Date
    2018-12-17
    Online Publication Date
    2018-12-17
    Print Publication Date
    2019-01-01
    Permanent link to this record
    http://hdl.handle.net/10754/630376
    
    Metadata
    Show full item record
    Abstract
    Self-assembled nanowires are posed to be viable alternatives to conventional planar structures, including the nitride epitaxy for optoelectronic, electronic and nano-energy applications. In many cases, current injection and extraction at the nanoscopic scale are essential for marked improvement at the macroscopic scale. In this investigation, we study the mechanism of nanoscale current injection and the origin of improvement of the flow of charged carriers at the group-III nitride semiconductor surface and metal-semiconductor interfaces. Conductive atomic force microscopy (c-AFM) and Kelvin probe force microscopy (KPFM) enable a rapid analysis of the electrical and morphological properties of single and ensemble nanostructures. The surface potential and current injection of AlGaN nanowire-based LEDs are spatially mapped before and after surface treatment with KOH solution. Treated-nanowires showed an improved current spreading and increased current injection by nearly 10×, reduced sub-turn-on voltage (as low as 5 V), and smaller series resistance. The reduced contact potential confirms the lower semiconductor/metal barrier, thus enabling larger carriers flow, and correlates with the 15% increase in injection efficiency in macroscopic LEDs. The improvement leads to the normalization of nanoscale electrical conducting properties of UV AlGaN-based nanowire-LEDs and lays the foundation for the realization of practical nanowire-based device applications.
    Citation
    Priante D, Tangi M, Min J-W, Alfaraj N, Liang JW, et al. (2018) Enhanced electro-optic performance of surface-treated nanowires: origin and mechanism of nanoscale current injection for reliable ultraviolet light-emitting diodes. Optical Materials Express 9: 203. Available: http://dx.doi.org/10.1364/ome.9.000203.
    Sponsors
    King Abdulaziz City for Science and Technology (KACST) (KACST TIC R2-FP-008); King Abdullah University of Science and Technology (KAUST) (BAS/1/1614-01-01, C/M-20000-12-001-77, BAS/1/1664-01-01, URF/1/3437-01-01) GCC Research Council Grant REP/1/3189-01-01; National Natural Science Foundation of China (Grant No. 61774065).
    Publisher
    The Optical Society
    Journal
    Optical Materials Express
    DOI
    10.1364/ome.9.000203
    Additional Links
    https://www.osapublishing.org/ome/abstract.cfm?uri=ome-9-1-203
    ae974a485f413a2113503eed53cd6c53
    10.1364/ome.9.000203
    Scopus Count
    Collections
    Articles; Electrical and Computer Engineering Program; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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