Epitaxial Mn5Ge3 (100) layer on Ge (100) substrates obtained by flash lamp annealing
Zeng, Yu Jia
KAUST DepartmentPhysical Science and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/630334
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AbstractMnGe thin films have been demonstrated as promising spin-injector materials for germanium-based spintronic devices. So far, MnGe has been grown epitaxially only on Ge (111) substrates. In this letter, we present the growth of epitaxial MnGe films on Ge (100) substrates. The MnGe film is synthetized via sub-second solid-state reaction between Mn and Ge upon flash lamp annealing for 20 ms at the ambient pressure. The single crystalline MnGe is ferromagnetic with a Curie temperature of 283 K. Both the c-axis of hexagonal MnGe and the magnetic easy axis are parallel to the Ge (100) surface. The millisecond-range flash epitaxy provides a new avenue for the fabrication of Ge-based spin-injectors fully compatible with CMOS technology.
CitationXie Y, Yuan Y, Wang M, Xu C, Hübner R, et al. (2018) Epitaxial Mn5Ge3 (100) layer on Ge (100) substrates obtained by flash lamp annealing. Applied Physics Letters 113: 222401. Available: http://dx.doi.org/10.1063/1.5057733.
SponsorsThis work was financially supported by the Helmholtz Association of German Research Centers (No. HGF-VH-NG-713). The author Y. Xie (File No. 201706340054) acknowledges the financial support by China Scholarship Council. Support by A. Scholz, R. Aniol and B. Scheumann is gratefully acknowledged. Furthermore, the use of HZDR Ion Beam Center TEM facilities and the funding of TEM Talos by the German Federal Ministry of Education of Research (BMBF), Grant No. 03SF0451, in the framework of HEMCP are acknowledged.
JournalApplied Physics Letters