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dc.contributor.authorCosta, Julio C.
dc.contributor.authorPouryazdan, Arash
dc.contributor.authorPanidi, Julianna
dc.contributor.authorAnthopoulos, Thomas D.
dc.contributor.authorLiedke, Maciej O.
dc.contributor.authorSchneider, Christof
dc.contributor.authorWagner, Andreas
dc.contributor.authorMunzenrieder, Niko
dc.date.accessioned2018-12-06T07:26:10Z
dc.date.available2018-12-06T07:26:10Z
dc.date.issued2018-10-18
dc.identifier.citationCosta JC, Pouryazdan A, Panidi J, Anthopoulos T, Liedke MO, et al. (2018) Low Temperature and Radiation Stability of Flexible IGZO TFTs and their Suitability for Space Applications. 2018 48th European Solid-State Device Research Conference (ESSDERC). Available: http://dx.doi.org/10.1109/ESSDERC.2018.8486889.
dc.identifier.doi10.1109/ESSDERC.2018.8486889
dc.identifier.urihttp://hdl.handle.net/10754/630217
dc.description.abstractIn this paper, Low Earth Orbit radiation and temperature conditions are mimicked to investigate the suitability of flexible Indium-Gallium-Zinc-Oxide transistors for lightweight space-wearables. Such wearable devices could be incorporated into spacesuits as unobtrusive sensors such as radiation detectors or physiological monitors. Due to the harsh environment to which these space-wearables would be exposed, they have to be able to withstand high radiation doses and low temperatures. For this reason, the impacts of high energetic electron irradiation with fluences up to 10 e/cm and low operating temperatures down to 78 K, are investigated. This simulates 278 h in a Low Earth Orbit. The threshold voltage and mobility of transistors that were exposed to e-irradiation are found to shift by +0.09 0.05 V and-0.6 0.5 cmVs. Subsequent low temperature exposure resulted in additional shifts of +0.38V and-5.95 cmVs for the same parameters. These values are larger than the ones obtained from non-irradiated reference samples. If this is considered during the systems' design, these devices can be used to unobtrusively integrate sensor systems into space-suits.
dc.description.sponsorshipThis work was partially supported by EPSRC, GCRF, and NIHR, under the contact number: EP/R013837/1 (SmartSensOtics)
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.urlhttps://ieeexplore.ieee.org/document/8486889
dc.rightsArchived with thanks to 2018 48th European Solid-State Device Research Conference (ESSDERC)
dc.subjectamorphous oxides
dc.subjectflexible electronics
dc.subjectspace applications
dc.subjectthin film transistors
dc.subjectwearables
dc.titleLow Temperature and Radiation Stability of Flexible IGZO TFTs and their Suitability for Space Applications
dc.typeConference Paper
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journal2018 48th European Solid-State Device Research Conference (ESSDERC)
dc.conference.date2018-09-03 to 2018-09-06
dc.conference.name48th European Solid-State Device Research Conference, ESSDERC 2018
dc.conference.locationDresden, DEU
dc.eprint.versionPost-print
dc.contributor.institutionUniversity of Sussex, Brighton, , United Kingdom
dc.contributor.institutionImperial College, London, , United Kingdom
dc.contributor.institutionHelmholtz-Zentrum Dresden-Rossendorf, Dresden, , Germany
kaust.personAnthopoulos, Thomas D.
refterms.dateFOA2018-12-06T07:28:27Z
dc.date.published-online2018-10-18
dc.date.published-print2018-09


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