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    Low Temperature and Radiation Stability of Flexible IGZO TFTs and their Suitability for Space Applications

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    Type
    Conference Paper
    Authors
    Costa, Julio C.
    Pouryazdan, Arash
    Panidi, Julianna
    Anthopoulos, Thomas D. cc
    Liedke, Maciej O.
    Schneider, Christof
    Wagner, Andreas
    Munzenrieder, Niko
    KAUST Department
    KAUST Solar Center (KSC)
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2018-10-18
    Online Publication Date
    2018-10-18
    Print Publication Date
    2018-09
    Permanent link to this record
    http://hdl.handle.net/10754/630217
    
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    Abstract
    In this paper, Low Earth Orbit radiation and temperature conditions are mimicked to investigate the suitability of flexible Indium-Gallium-Zinc-Oxide transistors for lightweight space-wearables. Such wearable devices could be incorporated into spacesuits as unobtrusive sensors such as radiation detectors or physiological monitors. Due to the harsh environment to which these space-wearables would be exposed, they have to be able to withstand high radiation doses and low temperatures. For this reason, the impacts of high energetic electron irradiation with fluences up to 10 e/cm and low operating temperatures down to 78 K, are investigated. This simulates 278 h in a Low Earth Orbit. The threshold voltage and mobility of transistors that were exposed to e-irradiation are found to shift by +0.09 0.05 V and-0.6 0.5 cmVs. Subsequent low temperature exposure resulted in additional shifts of +0.38V and-5.95 cmVs for the same parameters. These values are larger than the ones obtained from non-irradiated reference samples. If this is considered during the systems' design, these devices can be used to unobtrusively integrate sensor systems into space-suits.
    Citation
    Costa JC, Pouryazdan A, Panidi J, Anthopoulos T, Liedke MO, et al. (2018) Low Temperature and Radiation Stability of Flexible IGZO TFTs and their Suitability for Space Applications. 2018 48th European Solid-State Device Research Conference (ESSDERC). Available: http://dx.doi.org/10.1109/ESSDERC.2018.8486889.
    Sponsors
    This work was partially supported by EPSRC, GCRF, and NIHR, under the contact number: EP/R013837/1 (SmartSensOtics)
    Publisher
    Institute of Electrical and Electronics Engineers (IEEE)
    Journal
    2018 48th European Solid-State Device Research Conference (ESSDERC)
    Conference/Event name
    48th European Solid-State Device Research Conference, ESSDERC 2018
    DOI
    10.1109/ESSDERC.2018.8486889
    Additional Links
    https://ieeexplore.ieee.org/document/8486889
    ae974a485f413a2113503eed53cd6c53
    10.1109/ESSDERC.2018.8486889
    Scopus Count
    Collections
    Conference Papers; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program; KAUST Solar Center (KSC)

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