Low Temperature and Radiation Stability of Flexible IGZO TFTs and their Suitability for Space Applications
Type
Conference PaperAuthors
Costa, Julio C.Pouryazdan, Arash
Panidi, Julianna
Anthopoulos, Thomas D.

Liedke, Maciej O.
Schneider, Christof
Wagner, Andreas
Munzenrieder, Niko
KAUST Department
KAUST Solar Center (KSC)Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Date
2018-10-18Online Publication Date
2018-10-18Print Publication Date
2018-09Permanent link to this record
http://hdl.handle.net/10754/630217
Metadata
Show full item recordAbstract
In this paper, Low Earth Orbit radiation and temperature conditions are mimicked to investigate the suitability of flexible Indium-Gallium-Zinc-Oxide transistors for lightweight space-wearables. Such wearable devices could be incorporated into spacesuits as unobtrusive sensors such as radiation detectors or physiological monitors. Due to the harsh environment to which these space-wearables would be exposed, they have to be able to withstand high radiation doses and low temperatures. For this reason, the impacts of high energetic electron irradiation with fluences up to 10 e/cm and low operating temperatures down to 78 K, are investigated. This simulates 278 h in a Low Earth Orbit. The threshold voltage and mobility of transistors that were exposed to e-irradiation are found to shift by +0.09 0.05 V and-0.6 0.5 cmVs. Subsequent low temperature exposure resulted in additional shifts of +0.38V and-5.95 cmVs for the same parameters. These values are larger than the ones obtained from non-irradiated reference samples. If this is considered during the systems' design, these devices can be used to unobtrusively integrate sensor systems into space-suits.Citation
Costa JC, Pouryazdan A, Panidi J, Anthopoulos T, Liedke MO, et al. (2018) Low Temperature and Radiation Stability of Flexible IGZO TFTs and their Suitability for Space Applications. 2018 48th European Solid-State Device Research Conference (ESSDERC). Available: http://dx.doi.org/10.1109/ESSDERC.2018.8486889.Sponsors
This work was partially supported by EPSRC, GCRF, and NIHR, under the contact number: EP/R013837/1 (SmartSensOtics)Conference/Event name
48th European Solid-State Device Research Conference, ESSDERC 2018Additional Links
https://ieeexplore.ieee.org/document/8486889ae974a485f413a2113503eed53cd6c53
10.1109/ESSDERC.2018.8486889