Ferroelectric Polarization Rotation in Order–Disorder-Type LiNbO3 Thin Films
Type
ArticleAuthors
Yoo, Tae SupLee, Sang A
Roh, Changjae
Kang, Seunghun
Seol, Daehee
Guan, Xinwei
Bae, Jong-Seong
Kim, Jiwoong
Kim, Young-Min

Jeong, Hu Young

Jeong, Seunggyo
Mohamed, Ahmed Yousef
Cho, Deok-Yong

Jo, Ji Young

Park, Sungkyun
Wu, Tao

Kim, Yunseok

Lee, Jongseok
Choi, Woo Seok

KAUST Department
Laboratory of Nano Oxides for Sustainable EnergyMaterial Science and Engineering Program
Physical Science and Engineering (PSE) Division
Date
2018-11-08Online Publication Date
2018-11-08Print Publication Date
2018-12-05Permanent link to this record
http://hdl.handle.net/10754/630198
Metadata
Show full item recordAbstract
The direction of ferroelectric polarization is prescribed by the symmetry of the crystal structure. Therefore, rotation of the polarization direction is largely limited, despite the opportunity it offers in understanding important dielectric phenomena such as piezoelectric response near the morphotropic phase boundaries and practical applications such as ferroelectric memory. In this study, we report the observation of continuous rotation of ferroelectric polarization in order-disorder-type LiNbO3 thin films. The spontaneous polarization could be tilted from an out-of-plane to an in-plane direction in the thin film by controlling the Li vacancy concentration within the hexagonal lattice framework. Partial inclusion of monoclinic-like phase is attributed to the breaking of macroscopic inversion symmetry along different directions and the emergence of ferroelectric polarization along the in-plane direction.Citation
Yoo TS, Lee SA, Roh C, Kang S, Seol D, et al. (2018) Ferroelectric Polarization Rotation in Order–Disorder-Type LiNbO3 Thin Films. ACS Applied Materials & Interfaces 10: 41471–41478. Available: http://dx.doi.org/10.1021/acsami.8b12900.Sponsors
We thank J. Lee for insightful discussion. This work was supported by Basic Science Research Programs through the National Research Foundation of Korea (NRF) (NRF-2017R1A2B4011083, NRF-2016R1A6A3A11934867 (S.A.L.), NRF-2015R1A5A1009962 (C.R. and J.L.), NRF-2014R1A4A1008474 (S.K., D.S., and Y.K.), NRF-2018R1D1A1B07045663 (J.K. and S.P.), NRF-2015R1C1A1A02037514 (D.-Y.C.), NRF-2016R1D1A1A02937051 (J.Y.J.), and NRF-2015M3D1A1070672 (Y.M.K.). Y.M.K. was also supported by the Institute for Basic Science (IBS-R011-D1)).Publisher
American Chemical Society (ACS)arXiv
1812.03172Additional Links
https://pubs.acs.org/doi/full/10.1021/acsami.8b12900ae974a485f413a2113503eed53cd6c53
10.1021/acsami.8b12900