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    Ferroelectric Polarization Rotation in Order–Disorder-Type LiNbO3 Thin Films

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    Type
    Article
    Authors
    Yoo, Tae Sup
    Lee, Sang A
    Roh, Changjae
    Kang, Seunghun
    Seol, Daehee
    Guan, Xinwei
    Bae, Jong-Seong
    Kim, Jiwoong
    Kim, Young-Min cc
    Jeong, Hu Young cc
    Jeong, Seunggyo
    Mohamed, Ahmed Yousef
    Cho, Deok-Yong cc
    Jo, Ji Young cc
    Park, Sungkyun
    Wu, Tao cc
    Kim, Yunseok cc
    Lee, Jongseok
    Choi, Woo Seok cc
    KAUST Department
    Laboratory of Nano Oxides for Sustainable Energy
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2018-11-08
    Online Publication Date
    2018-11-08
    Print Publication Date
    2018-12-05
    Permanent link to this record
    http://hdl.handle.net/10754/630198
    
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    Abstract
    The direction of ferroelectric polarization is prescribed by the symmetry of the crystal structure. Therefore, rotation of the polarization direction is largely limited, despite the opportunity it offers in understanding important dielectric phenomena such as piezoelectric response near the morphotropic phase boundaries and practical applications such as ferroelectric memory. In this study, we report the observation of continuous rotation of ferroelectric polarization in order-disorder-type LiNbO3 thin films. The spontaneous polarization could be tilted from an out-of-plane to an in-plane direction in the thin film by controlling the Li vacancy concentration within the hexagonal lattice framework. Partial inclusion of monoclinic-like phase is attributed to the breaking of macroscopic inversion symmetry along different directions and the emergence of ferroelectric polarization along the in-plane direction.
    Citation
    Yoo TS, Lee SA, Roh C, Kang S, Seol D, et al. (2018) Ferroelectric Polarization Rotation in Order–Disorder-Type LiNbO3 Thin Films. ACS Applied Materials & Interfaces 10: 41471–41478. Available: http://dx.doi.org/10.1021/acsami.8b12900.
    Sponsors
    We thank J. Lee for insightful discussion. This work was supported by Basic Science Research Programs through the National Research Foundation of Korea (NRF) (NRF-2017R1A2B4011083, NRF-2016R1A6A3A11934867 (S.A.L.), NRF-2015R1A5A1009962 (C.R. and J.L.), NRF-2014R1A4A1008474 (S.K., D.S., and Y.K.), NRF-2018R1D1A1B07045663 (J.K. and S.P.), NRF-2015R1C1A1A02037514 (D.-Y.C.), NRF-2016R1D1A1A02937051 (J.Y.J.), and NRF-2015M3D1A1070672 (Y.M.K.). Y.M.K. was also supported by the Institute for Basic Science (IBS-R011-D1)).
    Publisher
    American Chemical Society (ACS)
    Journal
    ACS Applied Materials & Interfaces
    DOI
    10.1021/acsami.8b12900
    arXiv
    1812.03172
    Additional Links
    https://pubs.acs.org/doi/full/10.1021/acsami.8b12900
    ae974a485f413a2113503eed53cd6c53
    10.1021/acsami.8b12900
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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