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dc.contributor.authorGarg, Manjari
dc.contributor.authorNaik, Tejas Rajendra
dc.contributor.authorPathak, Ravi
dc.contributor.authorRao, Valipe Ramgopal
dc.contributor.authorLiao, Che-Hao
dc.contributor.authorLi, Kuang-Hui
dc.contributor.authorSun, Haiding
dc.contributor.authorLi, Xiaohang
dc.contributor.authorSingh, Rajendra
dc.date.accessioned2018-12-05T08:06:38Z
dc.date.available2018-12-05T08:06:38Z
dc.date.issued2018-11-19
dc.identifier.citationGarg M, Naik TR, Pathak R, Rao VR, Liao C-H, et al. (2018) Effect of surface passivation process for AlGaN/GaN HEMT heterostructures using phenol functionalized-porphyrin based organic molecules. Journal of Applied Physics 124: 195702. Available: http://dx.doi.org/10.1063/1.5049873.
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.doi10.1063/1.5049873
dc.identifier.urihttp://hdl.handle.net/10754/630185
dc.description.abstractIn this work, we investigate an unexplored possibility of passivating the charged surface states on AlGaN/GaN high electron mobility transistor (HEMT) heterostructures by using organic molecules. This has further led to remarkable enhancement in the electrical properties of rectifying metal-semiconductor contacts on AlGaN/GaN. Phenol functionalized Zinc metallated-Tetra Phenyl Porphyrin (Zn-TPPOH) organic molecules were adsorbed on AlGaN/GaN via the solution phase to form a molecular layer (MoL). The presence of the MoL was confirmed using X-ray Photoelectron Spectroscopy (XPS). The thickness of the MoL was assessed as ∼1 nm, using Spectroscopic Ellipsometry and cross-sectional Transmission Electron Microscopy. XPS peak-shift analyses together with Kelvin Probe Force Microscopy revealed that the molecular surface modification reduced the surface potential of AlGaN by approximately 250 meV. Consequently, the Barrier height (ideality factor) of Ni Schottky diodes on AlGaN/GaN was increased (reduced) significantly from 0.91 ± 0.05 eV (2.5 ± 0.31) for Ni/AlGaN/GaN to 1.37 ± 0.03 eV (1.4 ± 0.29) for Ni/Zn-TPPOH/AlGaN/GaN. In addition, a noteworthy decrement in the reverse current from 2.6 ± 1.93 μA to 0.31 ± 0.19 nA at −5 V (∼10 000 times) was observed from Current-Voltage (I-V) measurements. This surface-modification process can be fruitful for improving the performance of AlGaN/GaN HEMTs, mitigating the adverse effects of surface states and polarization in these materials.
dc.description.sponsorshipManjari Garg is grateful to the Council of Scientific and Industrial Research (CSIR), India, for providing research fellowship. The authors would like to acknowledge Indian Nanoelectronics User Program (INUP) at Indian Institute of Technology Bombay for the molecular chemisorption work and XPS measurements. The authors are also thankful to Professor M. Ravikanth, IIT Bombay, for porphyrin based organic molecules. The authors are also obliged to Nanoscale Research Facility (NRF) at Indian Institute of Technology Delhi for the deposition of Cu and Ni Schottky contacts and for KPFM, Spectroscopic Ellipsometry, and I-V and C-V measurements. The KAUST authors acknowledge the support from KAUST Baseline BAS/1/1664-01-01, KAUST Competitive Research Grant URF/1/3437-01-01, and GCC Grant REP/1/3189-01-01.
dc.publisherAIP Publishing
dc.relation.urlhttps://aip.scitation.org/doi/10.1063/1.5049873
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Applied Physics and may be found at http://doi.org/10.1063/1.5049873.
dc.subjectSemiconductors
dc.subjectHeterostructures
dc.subjectSchottky diodes
dc.subjectKelvin probe force microscopy
dc.subjectX-ray photoelectron spectroscopy
dc.subjectPorphyrin
dc.subjectElectrical properties and parameters
dc.subjectPassivation
dc.titleEffect of surface passivation process for AlGaN/GaN HEMT heterostructures using phenol functionalized-porphyrin based organic molecules
dc.typeArticle
dc.contributor.departmentAdvanced Semiconductor Laboratory
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalJournal of Applied Physics
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionDepartment of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
dc.contributor.institutionCentre of Excellence in Nanoelectronics, Indian Institute of Technology Bombay, Powai, Mumbai, Maharashtra 400076, India
dc.contributor.institutionDepartment of Electrical Engineering, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
kaust.personLiao, Che-Hao
kaust.personLi, Kuang-Hui
kaust.personSun, Haiding
kaust.personLi, Xiaohang
kaust.grant.numberBAS/1/1664-01-01
kaust.grant.numberURF/1/3437-01-01
kaust.grant.numberREP/1/3189-01-01
refterms.dateFOA2018-12-05T08:30:26Z
dc.date.published-online2018-11-19
dc.date.published-print2018-11-21


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