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    Effect of surface passivation process for AlGaN/GaN HEMT heterostructures using phenol functionalized-porphyrin based organic molecules

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    Type
    Article
    Authors
    Garg, Manjari cc
    Naik, Tejas Rajendra
    Pathak, Ravi
    Rao, Valipe Ramgopal
    Liao, Che-Hao
    Li, Kuang-Hui
    Sun, Haiding cc
    Li, Xiaohang cc
    Singh, Rajendra
    KAUST Department
    Advanced Semiconductor Laboratory
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    KAUST Grant Number
    BAS/1/1664-01-01
    URF/1/3437-01-01
    REP/1/3189-01-01
    Date
    2018-11-19
    Online Publication Date
    2018-11-19
    Print Publication Date
    2018-11-21
    Permanent link to this record
    http://hdl.handle.net/10754/630185
    
    Metadata
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    Abstract
    In this work, we investigate an unexplored possibility of passivating the charged surface states on AlGaN/GaN high electron mobility transistor (HEMT) heterostructures by using organic molecules. This has further led to remarkable enhancement in the electrical properties of rectifying metal-semiconductor contacts on AlGaN/GaN. Phenol functionalized Zinc metallated-Tetra Phenyl Porphyrin (Zn-TPPOH) organic molecules were adsorbed on AlGaN/GaN via the solution phase to form a molecular layer (MoL). The presence of the MoL was confirmed using X-ray Photoelectron Spectroscopy (XPS). The thickness of the MoL was assessed as ∼1 nm, using Spectroscopic Ellipsometry and cross-sectional Transmission Electron Microscopy. XPS peak-shift analyses together with Kelvin Probe Force Microscopy revealed that the molecular surface modification reduced the surface potential of AlGaN by approximately 250 meV. Consequently, the Barrier height (ideality factor) of Ni Schottky diodes on AlGaN/GaN was increased (reduced) significantly from 0.91 ± 0.05 eV (2.5 ± 0.31) for Ni/AlGaN/GaN to 1.37 ± 0.03 eV (1.4 ± 0.29) for Ni/Zn-TPPOH/AlGaN/GaN. In addition, a noteworthy decrement in the reverse current from 2.6 ± 1.93 μA to 0.31 ± 0.19 nA at −5 V (∼10 000 times) was observed from Current-Voltage (I-V) measurements. This surface-modification process can be fruitful for improving the performance of AlGaN/GaN HEMTs, mitigating the adverse effects of surface states and polarization in these materials.
    Citation
    Garg M, Naik TR, Pathak R, Rao VR, Liao C-H, et al. (2018) Effect of surface passivation process for AlGaN/GaN HEMT heterostructures using phenol functionalized-porphyrin based organic molecules. Journal of Applied Physics 124: 195702. Available: http://dx.doi.org/10.1063/1.5049873.
    Sponsors
    Manjari Garg is grateful to the Council of Scientific and Industrial Research (CSIR), India, for providing research fellowship. The authors would like to acknowledge Indian Nanoelectronics User Program (INUP) at Indian Institute of Technology Bombay for the molecular chemisorption work and XPS measurements. The authors are also thankful to Professor M. Ravikanth, IIT Bombay, for porphyrin based organic molecules. The authors are also obliged to Nanoscale Research Facility (NRF) at Indian Institute of Technology Delhi for the deposition of Cu and Ni Schottky contacts and for KPFM, Spectroscopic Ellipsometry, and I-V and C-V measurements. The KAUST authors acknowledge the support from KAUST Baseline BAS/1/1664-01-01, KAUST Competitive Research Grant URF/1/3437-01-01, and GCC Grant REP/1/3189-01-01.
    Publisher
    AIP Publishing
    Journal
    Journal of Applied Physics
    DOI
    10.1063/1.5049873
    Additional Links
    https://aip.scitation.org/doi/10.1063/1.5049873
    ae974a485f413a2113503eed53cd6c53
    10.1063/1.5049873
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Electrical Engineering Program; Material Science and Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

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