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dc.contributor.authorXu, Xiangming
dc.contributor.authorWang,Zhenwei
dc.contributor.authorLopatin, Sergei
dc.contributor.authorQuevedo-Lopez, M A
dc.contributor.authorAlshareef, Husam N.
dc.date.accessioned2018-12-05T08:03:45Z
dc.date.available2018-12-05T08:03:45Z
dc.date.issued2018-12-17
dc.identifier.citationXu X, Wang Z, Lopatin S, Quevedo-Lopez MA, Alshareef HN (2018) Wafer scale quasi single crystalline MoS2 realized by epitaxial phase conversion. 2D Materials. Available: http://dx.doi.org/10.1088/2053-1583/aaf3e9.
dc.identifier.issn2053-1583
dc.identifier.doi10.1088/2053-1583/aaf3e9
dc.identifier.urihttp://hdl.handle.net/10754/630170
dc.description.abstractVapor-solid phase reaction (VSPR) is a two-step process for synthesizing 2D MoS2. In the first step, a precursor film such as molybdenum oxide is grown on a substrate, followed by a sulfurization process at elevated temperature. This process offers a scalable fabrication of wafer-scale film with feasible control in thickness and uniformity. However, the properties of MoS2 films from this VSPR process often suffer from poor electrical properties. The major reason is their polycrystalline (PC) structure with large concentrations of defects and grain boundaries, which are inherited from the amorphous precursor films. Here, we report a new and scalable VSPR process in which epitaxial MoO2 films (grown over a 2-inch wafers) are used as high-quality precursors, which are converted into quasi-single-crystalline (QSC) MoS2. We demonstrate that the field effect mobility of transistors fabricated using a QSC MoS2 channel is almost 35 times larger, compared to a PC MoS2 channel, also better than most previously reported MoS2 films by other two-step MoS2 formation processes. Our process presents a new approach in which the epitaxial growth of the precursor phase can be used to improve 2D semiconductor and device performance.
dc.description.sponsorshipThe research reported in this publication was supported by the King Abdullah University of Science and Technology (KAUST). The authors thank Dr. Yao He and Dr. Xiaohe Miao for their help in the XRD measurement, Ms. Nini Wei for her help in the TEM sample preparation by FIB, Dr. Dalaver H. Anjum for the TEM measurement of the cross-section structure of the samples, and Dr. Mohamed Nejib Hedhili for help with the XPS measurements.
dc.publisherIOP Publishing
dc.relation.urlhttp://iopscience.iop.org/article/10.1088/2053-1583/aaf3e9
dc.rightsThis is an author-created, un-copyedited version of an article accepted for publication/published \nin 2D Materials. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://doi.org/10.1088/2053-1583/aaf3e9
dc.subjectMolybdenum dioxide
dc.subjectmolybdenum disulfide
dc.subjectquasi-single crystalline
dc.subjectpolycrystalline
dc.subjectwafer scale
dc.titleWafer scale quasi single crystalline $MoS_{2}$ realized by epitaxial phase conversion
dc.typeArticle
dc.contributor.departmentElectron Microscopy
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journal2D Materials
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Materials Science and Engineering, University of Texas at Dallas, 800 W. Campbell Rd., Richardson, Texas 75080, United States.
kaust.personXu, Xiangming
kaust.personWang,Zhenwei
kaust.personLopatin, Sergei
kaust.personAlshareef, Husam N.
refterms.dateFOA2018-12-05T10:49:05Z


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