Ferromagnet-Free All-Electric Spin Hall Transistors.
dc.contributor.author | Choi, Won Young | |
dc.contributor.author | Kim, Hyung-jun | |
dc.contributor.author | Chang, Joonyeon | |
dc.contributor.author | Han, Suk Hee | |
dc.contributor.author | Abbout, Adel | |
dc.contributor.author | Saidaoui, Hamed Ben Mohamed | |
dc.contributor.author | Manchon, Aurelien | |
dc.contributor.author | Lee, Kyung-Jin | |
dc.contributor.author | Koo, Hyun Cheol | |
dc.date.accessioned | 2018-12-04T13:04:20Z | |
dc.date.available | 2018-12-04T13:04:20Z | |
dc.date.issued | 2018-11-25 | |
dc.identifier.citation | Choi, W. Y., Kim, H., Chang, J., Han, S. H., Abbout, A., Saidaoui, H. B. M., … Koo, H. C. (2018). Ferromagnet-Free All-Electric Spin Hall Transistors. Nano Letters, 18(12), 7998–8002. doi:10.1021/acs.nanolett.8b03998 | |
dc.identifier.issn | 1530-6984 | |
dc.identifier.issn | 1530-6992 | |
dc.identifier.pmid | 30472862 | |
dc.identifier.doi | 10.1021/acs.nanolett.8b03998 | |
dc.identifier.uri | http://hdl.handle.net/10754/630150 | |
dc.description.abstract | The spin field-effect transistor, an essential building block for spin information processing, shows promise for energy-efficient computing. Despite steady progress, it suffers from a low-output signal because of low spin injection and detection efficiencies. We demonstrate that this low-output obstacle can be overcome by utilizing direct and inverse spin Hall effects for spin injection and detection, respectively, without a ferromagnetic component. The output voltage of our all-electric spin Hall transistor is about two orders of magnitude larger than that of previously reported spin transistors based on ferromagnets or quantum point contacts. Moreover, the symmetry of the spin Hall effect allows all-electric spin Hall transistors to effectively mimic n-type and p-type devices, opening a way of realizing the complementary functionality. | |
dc.description.sponsorship | This work was mainly supported by Samsung Research Funding Center of Samsung Electronics under project number SRFC-MA1502-06. H.C.K acknowledges the KIST and KU-KIST Institutional Programs. A.M. and A.A. acknowledge support from the King Abdullah University of Science and Technology (KAUST). K.-J.L. acknowledges the KIST Institutional Program. | |
dc.language.iso | en | |
dc.publisher | American Chemical Society (ACS) | |
dc.relation.url | https://pubs.acs.org/doi/10.1021/acs.nanolett.8b03998 | |
dc.rights | This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acs.nanolett.8b03998. | |
dc.subject | Spin Hall Effect | |
dc.subject | Rashba Effect | |
dc.subject | Spin Transistor | |
dc.subject | Spin Logic Device | |
dc.subject | Spin Precession | |
dc.title | Ferromagnet-Free All-Electric Spin Hall Transistors. | |
dc.type | Article | |
dc.contributor.department | Physical Science and Engineering (PSE) Division | |
dc.contributor.department | Material Science and Engineering Program | |
dc.identifier.journal | Nano Letters | |
dc.rights.embargodate | 2019-11-25 | |
dc.eprint.version | Post-print | |
dc.contributor.institution | Center for Spintronics, Korea Institute of Science and Technology, Seoul 02792, Korea | |
dc.contributor.institution | KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Korea | |
dc.contributor.institution | Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea | |
dc.identifier.volume | 18 | |
dc.identifier.issue | 12 | |
dc.contributor.affiliation | King Abdullah University of Science and Technology (KAUST) | |
dc.identifier.pages | 7998-8002 | |
kaust.person | Abbout, Adel | |
kaust.person | Saidaoui, Hamed Ben Mohamed | |
kaust.person | Manchon, Aurelien | |
kaust.person | Manchon, Aurelien | |
dc.identifier.eid | 2-s2.0-85058343681 | |
refterms.dateFOA | 2018-12-04T13:04:21Z | |
dc.date.published-online | 2018-11-25 | |
dc.date.published-print | 2018-12-12 |
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