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dc.contributor.authorChoi, Won Young
dc.contributor.authorKim, Hyung-jun
dc.contributor.authorChang, Joonyeon
dc.contributor.authorHan, Suk Hee
dc.contributor.authorAbbout, Adel
dc.contributor.authorSaidaoui, Hamed Ben Mohamed
dc.contributor.authorManchon, Aurelien
dc.contributor.authorLee, Kyung-Jin
dc.contributor.authorKoo, Hyun Cheol
dc.date.accessioned2018-12-04T13:04:20Z
dc.date.available2018-12-04T13:04:20Z
dc.date.issued2018-11-25
dc.identifier.citationChoi, W. Y., Kim, H., Chang, J., Han, S. H., Abbout, A., Saidaoui, H. B. M., … Koo, H. C. (2018). Ferromagnet-Free All-Electric Spin Hall Transistors. Nano Letters, 18(12), 7998–8002. doi:10.1021/acs.nanolett.8b03998
dc.identifier.issn1530-6984
dc.identifier.issn1530-6992
dc.identifier.pmid30472862
dc.identifier.doi10.1021/acs.nanolett.8b03998
dc.identifier.urihttp://hdl.handle.net/10754/630150
dc.description.abstractThe spin field-effect transistor, an essential building block for spin information processing, shows promise for energy-efficient computing. Despite steady progress, it suffers from a low-output signal because of low spin injection and detection efficiencies. We demonstrate that this low-output obstacle can be overcome by utilizing direct and inverse spin Hall effects for spin injection and detection, respectively, without a ferromagnetic component. The output voltage of our all-electric spin Hall transistor is about two orders of magnitude larger than that of previously reported spin transistors based on ferromagnets or quantum point contacts. Moreover, the symmetry of the spin Hall effect allows all-electric spin Hall transistors to effectively mimic n-type and p-type devices, opening a way of realizing the complementary functionality.
dc.description.sponsorshipThis work was mainly supported by Samsung Research Funding Center of Samsung Electronics under project number SRFC-MA1502-06. H.C.K acknowledges the KIST and KU-KIST Institutional Programs. A.M. and A.A. acknowledge support from the King Abdullah University of Science and Technology (KAUST). K.-J.L. acknowledges the KIST Institutional Program.
dc.language.isoen
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttps://pubs.acs.org/doi/10.1021/acs.nanolett.8b03998
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acs.nanolett.8b03998.
dc.subjectSpin Hall Effect
dc.subjectRashba Effect
dc.subjectSpin Transistor
dc.subjectSpin Logic Device
dc.subjectSpin Precession
dc.titleFerromagnet-Free All-Electric Spin Hall Transistors.
dc.typeArticle
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.contributor.departmentMaterial Science and Engineering Program
dc.identifier.journalNano Letters
dc.rights.embargodate2019-11-25
dc.eprint.versionPost-print
dc.contributor.institutionCenter for Spintronics, Korea Institute of Science and Technology, Seoul 02792, Korea
dc.contributor.institutionKU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Korea
dc.contributor.institutionDepartment of Materials Science and Engineering, Korea University, Seoul 02841, Korea
dc.identifier.volume18
dc.identifier.issue12
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
dc.identifier.pages7998-8002
kaust.personAbbout, Adel
kaust.personSaidaoui, Hamed Ben Mohamed
kaust.personManchon, Aurelien
kaust.personManchon, Aurelien
dc.identifier.eid2-s2.0-85058343681
refterms.dateFOA2018-12-04T13:04:21Z
dc.date.published-online2018-11-25
dc.date.published-print2018-12-12


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