AuthorsChoi, Won Young
Han, Suk Hee
Saidaoui, Hamed Ben Mohamed
Koo, Hyun Cheol
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Physical Science and Engineering (PSE) Division
Online Publication Date2018-11-25
Print Publication Date2018-12-12
Permanent link to this recordhttp://hdl.handle.net/10754/630150
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AbstractSpin field effect transistor, an essential building block for spin information processing, shows promise for energy-efficient computing. Despite steady progress, it suffers from a low output signal because of low spin injection and detection efficiencies. We demonstrate that this low-output obstacle can be overcome by utilizing direct and inverse spin Hall effects for spin injection and detection, respectively, without a ferromagnetic component. The output voltage of our all-electric spin Hall transistor is about two orders of magnitude larger than previously reported spin transistors based on ferromagnets or quantum point-contacts. Moreover, the symmetry of spin Hall effect allows all-electric spin Hall transistors to effectively mimic n-type and p-type devices, opening a way of realizing the complementary functionality.
CitationChoi, W. Y., Kim, H., Chang, J., Han, S. H., Abbout, A., Saidaoui, H. B. M., … Koo, H. C. (2018). Ferromagnet-Free All-Electric Spin Hall Transistors. Nano Letters, 18(12), 7998–8002. doi:10.1021/acs.nanolett.8b03998
SponsorsThis work was mainly supported by Samsung Research Funding Center of Samsung Electronics under project Number SRFC-MA1502-06. H.C.K acknowledge the KIST and KU-KIST 15 Institutional Programs. A.M. and A.A. acknowledge support from the King Abdullah University of Science and Technology (KAUST). K.-J.L. acknowledges the KIST Institutional Program.
PublisherAmerican Chemical Society (ACS)