AuthorsChoi, Won Young
Han, Suk Hee
Saidaoui, Hamed Ben Mohamed
Koo, Hyun Cheol
KAUST DepartmentPhysical Science and Engineering (PSE) Division
Material Science and Engineering Program
Online Publication Date2018-11-25
Print Publication Date2018-12-12
Embargo End Date2019-11-25
Permanent link to this recordhttp://hdl.handle.net/10754/630150
MetadataShow full item record
AbstractThe spin field-effect transistor, an essential building block for spin information processing, shows promise for energy-efficient computing. Despite steady progress, it suffers from a low-output signal because of low spin injection and detection efficiencies. We demonstrate that this low-output obstacle can be overcome by utilizing direct and inverse spin Hall effects for spin injection and detection, respectively, without a ferromagnetic component. The output voltage of our all-electric spin Hall transistor is about two orders of magnitude larger than that of previously reported spin transistors based on ferromagnets or quantum point contacts. Moreover, the symmetry of the spin Hall effect allows all-electric spin Hall transistors to effectively mimic n-type and p-type devices, opening a way of realizing the complementary functionality.
CitationChoi, W. Y., Kim, H., Chang, J., Han, S. H., Abbout, A., Saidaoui, H. B. M., … Koo, H. C. (2018). Ferromagnet-Free All-Electric Spin Hall Transistors. Nano Letters, 18(12), 7998–8002. doi:10.1021/acs.nanolett.8b03998
SponsorsThis work was mainly supported by Samsung Research Funding Center of Samsung Electronics under project number SRFC-MA1502-06. H.C.K acknowledges the KIST and KU-KIST Institutional Programs. A.M. and A.A. acknowledge support from the King Abdullah University of Science and Technology (KAUST). K.-J.L. acknowledges the KIST Institutional Program.
PublisherAmerican Chemical Society (ACS)
- Electrical detection of coherent spin precession using the ballistic intrinsic spin Hall effect.
- Authors: Choi WY, Kim HJ, Chang J, Han SH, Koo HC, Johnson M
- Issue date: 2015 Aug
- Spin Hall effect transistor.
- Authors: Wunderlich J, Park BG, Irvine AC, Zârbo LP, Rozkotová E, Nemec P, Novák V, Sinova J, Jungwirth T
- Issue date: 2010 Dec 24
- All-electric all-semiconductor spin field-effect transistors.
- Authors: Chuang P, Ho SC, Smith LW, Sfigakis F, Pepper M, Chen CH, Fan JC, Griffiths JP, Farrer I, Beere HE, Jones GA, Ritchie DA, Chen TM
- Issue date: 2015 Jan
- Rashba Effect in Functional Spintronic Devices.
- Authors: Koo HC, Kim SB, Kim H, Park TE, Choi JW, Kim KW, Go G, Oh JH, Lee DK, Park ES, Hong IS, Lee KJ
- Issue date: 2020 Dec
- Complementary spin transistor using a quantum well channel.
- Authors: Park YH, Choi JW, Kim HJ, Chang J, Han SH, Choi HJ, Koo HC
- Issue date: 2017 Apr 20