Type
ArticleAuthors
Choi, Won YoungKim, Hyung-jun
Chang, Joonyeon
Han, Suk Hee
Abbout, Adel
Saidaoui, Hamed Ben Mohamed
Manchon, Aurélien
Lee, Kyung-Jin
Koo, Hyun Cheol
KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionPhysical Science and Engineering (PSE) Division
Date
2018-11-25Online Publication Date
2018-11-25Print Publication Date
2018-12-12Permanent link to this record
http://hdl.handle.net/10754/630150
Metadata
Show full item recordAbstract
Spin field effect transistor, an essential building block for spin information processing, shows promise for energy-efficient computing. Despite steady progress, it suffers from a low output signal because of low spin injection and detection efficiencies. We demonstrate that this low-output obstacle can be overcome by utilizing direct and inverse spin Hall effects for spin injection and detection, respectively, without a ferromagnetic component. The output voltage of our all-electric spin Hall transistor is about two orders of magnitude larger than previously reported spin transistors based on ferromagnets or quantum point-contacts. Moreover, the symmetry of spin Hall effect allows all-electric spin Hall transistors to effectively mimic n-type and p-type devices, opening a way of realizing the complementary functionality.Citation
Choi, W. Y., Kim, H., Chang, J., Han, S. H., Abbout, A., Saidaoui, H. B. M., … Koo, H. C. (2018). Ferromagnet-Free All-Electric Spin Hall Transistors. Nano Letters, 18(12), 7998–8002. doi:10.1021/acs.nanolett.8b03998Sponsors
This work was mainly supported by Samsung Research Funding Center of Samsung Electronics under project Number SRFC-MA1502-06. H.C.K acknowledge the KIST and KU-KIST 15 Institutional Programs. A.M. and A.A. acknowledge support from the King Abdullah University of Science and Technology (KAUST). K.-J.L. acknowledges the KIST Institutional Program.Publisher
American Chemical Society (ACS)Journal
Nano Lettersae974a485f413a2113503eed53cd6c53
10.1021/acs.nanolett.8b03998