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dc.contributor.authorLiu, Chaoming
dc.contributor.authorHübner, René
dc.contributor.authorXie, Yufang
dc.contributor.authorWang, Mao
dc.contributor.authorXu, C
dc.contributor.authorJiang, Zenan
dc.contributor.authorYuan, Ye
dc.contributor.authorLi, Xingji
dc.contributor.authorYang, Jianqun
dc.contributor.authorLi, Ling-wei
dc.contributor.authorWeschke, Eugen
dc.contributor.authorPrucnal, Slawomir
dc.contributor.authorHelm, Manfred
dc.contributor.authorZhou, Shengqiang
dc.date.accessioned2018-11-21T13:09:59Z
dc.date.available2018-11-21T13:09:59Z
dc.date.issued2018-11-30
dc.identifier.citationLiu C, Hübner R, Xie Y, Wang M, Xu C, et al. (2018) Ultra-fast annealing manipulated spinodal nano-decomposition in Mn-implanted Ge. Nanotechnology. Available: http://dx.doi.org/10.1088/1361-6528/aaefb1.
dc.identifier.issn0957-4484
dc.identifier.issn1361-6528
dc.identifier.doi10.1088/1361-6528/aaefb1
dc.identifier.urihttp://hdl.handle.net/10754/629935
dc.description.abstractIn the present work, millisecond-range flash lamp annealing is used to recrystallize Mn-implanted Ge. Through systematic investigations of structural and magnetic properties, we find that the flash lamp annealing produces a phase mixture consisting of spinodally decomposed Mn-rich ferromagnetic clusters within a paramagnetic-like matrix with randomly distributed Mn atoms. Increasing the annealing energy density from 46, via 50, to 56 J/cm2 causes the segregation of Mn atoms into clusters, as proven by transmission electron microscopy analysis and quantitatively confirmed by magnetization measurements. According to X-ray absorption spectroscopy, the dilute Mn ions within Ge are in d5 electronic configuration. This Mn-doped Ge shows paramagnetism, as evidenced by the unsaturated magnetic-field-dependent X-ray magnetic circular dichroism signal. Our study reveals how spinodal decomposition occurs and influences the formation of ferromagnetic Mn-rich Ge-Mn nanoclusters.
dc.description.sponsorshipAuthors acknowledge the ion implantation group at HZDR. This work is supported by National Natural Science Foundation of China (No. 11775061). The funding of TEM Talos by the German Federal Ministry of Education of Research (BMBF), Grant No. 03SF0451, in the framework of HEMCP is gratefully acknowledged. The author C. L. thanks the financial support by Chinese Scholarship Council (File No. 201706125070).
dc.publisherIOP Publishing
dc.relation.urlhttp://iopscience.iop.org/article/10.1088/1361-6528/aaefb1
dc.rightsThis is an author-created, un-copyedited version of an article accepted for publication/published \nin Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://doi.org/10.1088/1361-6528/aaefb1
dc.subjectIon implantation
dc.subjectflash lamp annealing
dc.subjectspinodal decomposition
dc.subjectGe-Mn nanoclusters
dc.titleUltra-fast annealing manipulated spinodal nano-decomposition in Mn-implanted Ge
dc.typeArticle
dc.contributor.departmentKing Abdullah University of Science and Technology, 23955, Thuwal, Saudi Arabia
dc.identifier.journalNanotechnology
dc.eprint.versionPost-print
dc.contributor.institutionHelmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, D-01328 Dresden, Germany
dc.contributor.institutionLaboratory for Space Environment and Physical Science, Research Center of Basic Space Science, Harbin Institute of Technology, 150001, Harbin, China
dc.contributor.institutionHarbin Institute of Technology, School of Materials Science and Engineering, 150001, Harbin, China
dc.contributor.institutionTechnische Universität Dresden, D-01062 Dresden, Germany
dc.contributor.institutionInnovative Center for Advanced Materials (ICAM), Hangzhou Dianzi University, Hangzhou 310012, P. R. China
dc.contributor.institutionHelmholtz-Zentrum Berlin für Materialien und Energie, Wilhelm-Conrad-Röntgen-Campus BESSY II, D-12489 Berlin, Germany
kaust.personYuan, Ye
refterms.dateFOA2018-11-22T11:30:43Z
dc.date.published-online2018-11-30
dc.date.published-print2019-02-01


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