Room-Temperature Ferroelectricity in Hexagonally Layered α-In2\nSe3\n Nanoflakes down to the Monolayer Limit
Tu, Shao Bo
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
KAUST Solar Center (KSC)
Material Science and Engineering Program
Nano Energy Lab
Physical Science and Engineering (PSE) Division
Online Publication Date2018-10-21
Print Publication Date2018-12
Permanent link to this recordhttp://hdl.handle.net/10754/629917
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Abstract2D ferroelectric material has emerged as an attractive building block for high-density data storage nanodevices. Although monolayer van der Waals ferroelectrics have been theoretically predicted, a key experimental breakthrough for such calculations is still not realized. Here, hexagonally stacking α-InSe nanoflake, a rarely studied van der Waals polymorph, is reported to exhibit out-of-plane (OOP) and in-plane (IP) ferroelectricity at room temperature. Ferroelectric multidomain states in a hexagonal α-InSe nanoflake with uniform thickness can survive to 6 nm. Most strikingly, the electric-field-induced polarization switching and hysteresis loop are, respectively, observed down to the bilayer and monolayer (≈1.2 nm) thicknesses, which designates it as the thinnest layered ferroelectric and verifies the corresponding theoretical calculation. In addition, two types of ferroelectric nanodevices employing the OOP and IP polarizations in 2H α-InSe are developed, which are applicable for nonvolatile memories and heterostructure-based nanoelectronics/optoelectronics.
CitationXue F, Hu W, Lee K-C, Lu L-S, Zhang J, et al. (2018) Room-Temperature Ferroelectricity in Hexagonally Layered α-In2\nSe3\n Nanoflakes down to the Monolayer Limit. Advanced Functional Materials: 1803738. Available: http://dx.doi.org/10.1002/adfm.201803738.
SponsorsF.X., W.H., and K.-C.L. contributed equally to this work. The research presented here was supported by King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No: CRF-2015-2634-CRG4, and CRF-2016-2996-CRG5. W.J.H thanks the support from the “Hundred Talents Program” of the Chinese Academy of Sciences. W.-H.C. acknowledges the support from the Ministry of Science and Technology (MOST) of Taiwan (105-2119-M-009-014-MY3, 107-2112-M-009-024-MY3) and the Center for Emergent Functional Matter Science (CEFMS) of NCTU.
JournalAdvanced Functional Materials