Show simple item record

dc.contributor.authorZhong, Hai
dc.contributor.authorWen, Yan
dc.contributor.authorZhao, Yuelei
dc.contributor.authorZhang, Qiang
dc.contributor.authorHuang, Qikun
dc.contributor.authorChen, Yanxue
dc.contributor.authorCai, Jianwang
dc.contributor.authorZhang, Xixiang
dc.contributor.authorLi, Run-Wei
dc.contributor.authorBai, Lihui
dc.contributor.authorKang, Shishou
dc.contributor.authorYan, Shishen
dc.contributor.authorTian, Yufeng
dc.date.accessioned2018-11-20T07:16:21Z
dc.date.available2018-11-20T07:16:21Z
dc.date.issued2018-11-14
dc.identifier.citationZhong H, Wen Y, Zhao Y, Zhang Q, Huang Q, et al. (2018) Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization. Advanced Functional Materials: 1806460. Available: http://dx.doi.org/10.1002/adfm.201806460.
dc.identifier.issn1616-301X
dc.identifier.doi10.1002/adfm.201806460
dc.identifier.urihttp://hdl.handle.net/10754/629913
dc.description.abstractEmerging nonvolatile multilevel memory devices have been regarded as a promising solution to meet the increasing demand of high-density memory with low-power consumption. In particular, decimal system of the new computers instead of binary system could be developed if ten nonvolatile states are realized. Here, a general remanent magnetism engineering method is proposed for realizing multiple reliable magnetic and resistance states, not depending on a specific material or device structure. Especially, as a proof-of-concept demonstration, ten states of nonvolatile memory based on the manipulation of ferromagnetic remanent magnetization have been revealed in both Co/Pt magnetic multilayers with strong perpendicular magnetic anisotropy and MgO-based magnetic tunneling junctions at room temperature. Considering ferromagnets have been one of the key factors that enabled the information revolution from its inception, this state-of-the-art remanent magnetism engineering approach has a very broad application prospect in the field of spintronics.
dc.description.sponsorshipThis work was supported by the National Science Foundation of China (Grant Nos. 11434006, 11774199, and 51871112), the National Basic Research Program of China (Grant No. 2015CB921502), the 111 ProjectB13029, and the Taishan Scholar Program of Shandong Province. H.Z. was supported by the King Abdullah University of Science and Technology (KAUST) during his visit to KAUST. X.X.Z. acknowledges the support from KAUST.
dc.publisherWiley
dc.relation.urlhttps://onlinelibrary.wiley.com/doi/full/10.1002/adfm.201806460
dc.rightsArchived with thanks to Advanced Functional Materials
dc.subjectmagnetic tunneling junctions
dc.subjectmagnetoresistance
dc.subjectmultilevel states
dc.subjectnonvolatile memory
dc.subjectremanent magnetization
dc.titleTen States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization
dc.typeArticle
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalAdvanced Functional Materials
dc.eprint.versionPost-print
dc.contributor.institutionSchool of Physics; State Key Laboratory of Crystal Materials; Shandong University; Jinan 250100 China
dc.contributor.institutionBeijing National Laboratory for Condensed Matter Physics; Institute of Physics; Chinese Academy of Sciences; Beijing 100190 China
dc.contributor.institutionKey Laboratory of Magnetic Materials and Devices; Ningbo Institute of Materials Technology and Engineering; Chinese Academy of Sciences; Ningbo 315201 China
dc.contributor.institutionSpintronics Institute; University of Jinan; Jinan 250022 China
kaust.personZhong, Hai
kaust.personWen, Yan
kaust.personZhao, Yuelei
kaust.personZhang, Qiang
kaust.personZhang, Xixiang
refterms.dateFOA2018-11-20T07:18:37Z


Files in this item

Thumbnail
Name:
Advanced_Functional_Materials -2018-Zhong Hai.pdf
Size:
2.365Mb
Format:
PDF
Description:
Accepted Manuscript

This item appears in the following Collection(s)

Show simple item record