Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization
Name:
Advanced_Functional_Materials -2018-Zhong Hai.pdf
Size:
2.365Mb
Format:
PDF
Description:
Accepted Manuscript
Type
ArticleAuthors
Zhong, HaiWen, Yan
Zhao, Yuelei
Zhang, Qiang

Huang, Qikun
Chen, Yanxue
Cai, Jianwang
Zhang, Xixiang

Li, Run-Wei
Bai, Lihui
Kang, Shishou
Yan, Shishen

Tian, Yufeng

KAUST Department
Material Science and Engineering ProgramPhysical Science and Engineering (PSE) Division
Date
2018-11-14Permanent link to this record
http://hdl.handle.net/10754/629913
Metadata
Show full item recordAbstract
Emerging nonvolatile multilevel memory devices have been regarded as a promising solution to meet the increasing demand of high-density memory with low-power consumption. In particular, decimal system of the new computers instead of binary system could be developed if ten nonvolatile states are realized. Here, a general remanent magnetism engineering method is proposed for realizing multiple reliable magnetic and resistance states, not depending on a specific material or device structure. Especially, as a proof-of-concept demonstration, ten states of nonvolatile memory based on the manipulation of ferromagnetic remanent magnetization have been revealed in both Co/Pt magnetic multilayers with strong perpendicular magnetic anisotropy and MgO-based magnetic tunneling junctions at room temperature. Considering ferromagnets have been one of the key factors that enabled the information revolution from its inception, this state-of-the-art remanent magnetism engineering approach has a very broad application prospect in the field of spintronics.Citation
Zhong H, Wen Y, Zhao Y, Zhang Q, Huang Q, et al. (2018) Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization. Advanced Functional Materials: 1806460. Available: http://dx.doi.org/10.1002/adfm.201806460.Sponsors
This work was supported by the National Science Foundation of China (Grant Nos. 11434006, 11774199, and 51871112), the National Basic Research Program of China (Grant No. 2015CB921502), the 111 ProjectB13029, and the Taishan Scholar Program of Shandong Province. H.Z. was supported by the King Abdullah University of Science and Technology (KAUST) during his visit to KAUST. X.X.Z. acknowledges the support from KAUST.Publisher
WileyJournal
Advanced Functional MaterialsAdditional Links
https://onlinelibrary.wiley.com/doi/full/10.1002/adfm.201806460ae974a485f413a2113503eed53cd6c53
10.1002/adfm.201806460