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    Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization

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    Advanced_Functional_Materials -2018-Zhong Hai.pdf
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    2.365Mb
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    Type
    Article
    Authors
    Zhong, Hai
    Wen, Yan
    Zhao, Yuelei
    Zhang, Qiang cc
    Huang, Qikun
    Chen, Yanxue
    Cai, Jianwang
    Zhang, Xixiang cc
    Li, Run-Wei
    Bai, Lihui
    Kang, Shishou
    Yan, Shishen cc
    Tian, Yufeng cc
    KAUST Department
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2018-11-14
    Permanent link to this record
    http://hdl.handle.net/10754/629913
    
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    Abstract
    Emerging nonvolatile multilevel memory devices have been regarded as a promising solution to meet the increasing demand of high-density memory with low-power consumption. In particular, decimal system of the new computers instead of binary system could be developed if ten nonvolatile states are realized. Here, a general remanent magnetism engineering method is proposed for realizing multiple reliable magnetic and resistance states, not depending on a specific material or device structure. Especially, as a proof-of-concept demonstration, ten states of nonvolatile memory based on the manipulation of ferromagnetic remanent magnetization have been revealed in both Co/Pt magnetic multilayers with strong perpendicular magnetic anisotropy and MgO-based magnetic tunneling junctions at room temperature. Considering ferromagnets have been one of the key factors that enabled the information revolution from its inception, this state-of-the-art remanent magnetism engineering approach has a very broad application prospect in the field of spintronics.
    Citation
    Zhong H, Wen Y, Zhao Y, Zhang Q, Huang Q, et al. (2018) Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization. Advanced Functional Materials: 1806460. Available: http://dx.doi.org/10.1002/adfm.201806460.
    Sponsors
    This work was supported by the National Science Foundation of China (Grant Nos. 11434006, 11774199, and 51871112), the National Basic Research Program of China (Grant No. 2015CB921502), the 111 ProjectB13029, and the Taishan Scholar Program of Shandong Province. H.Z. was supported by the King Abdullah University of Science and Technology (KAUST) during his visit to KAUST. X.X.Z. acknowledges the support from KAUST.
    Publisher
    Wiley
    Journal
    Advanced Functional Materials
    DOI
    10.1002/adfm.201806460
    Additional Links
    https://onlinelibrary.wiley.com/doi/full/10.1002/adfm.201806460
    ae974a485f413a2113503eed53cd6c53
    10.1002/adfm.201806460
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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