Zinc oxide clad limited area epitaxy semipolar III-nitride laser diodes
Mughal, Asad J.
Cohen, Daniel A.
Farrell, Robert M.
Speck, James S.
DenBaars, Steven P.
Online Publication Date2018-05-01
Print Publication Date2018-05-14
Permanent link to this recordhttp://hdl.handle.net/10754/629768
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AbstractWe report continuous-wave (CW) blue semipolar (202̲1) III-nitride laser diodes (LDs) that incorporate limited area epitaxy (LAE) n-AlGaN bottom cladding with thin p-GaN and ZnO top cladding layers. LAE mitigates LD design limitations that arise from stress relaxation, while ZnO layers reduce epitaxial growth time and temperature. Numerical modeling indicates that ZnO reduces the internal loss and increases the differential efficiency of TCO clad LDs. Room temperature CW lasing was achieved at 445 nm for a ridge waveguide LD with a threshold current density of 10.4 kA/cm2, a threshold voltage of 5.8 V, and a differential resistance of 1.1 Ω.
CitationMyzaferi A, Mughal AJ, Cohen DA, Farrell RM, Nakamura S, et al. (2018) Zinc oxide clad limited area epitaxy semipolar III-nitride laser diodes. Optics Express 26: 12490. Available: http://dx.doi.org/10.1364/oe.26.012490.
SponsorsSolid State Lighting and Energy Electronics Center (SSLEEC) at the University of California Santa Barbara (UCSB); Solid State Lighting Program (SSLP), a collaboration between King Abdulaziz City for Science and Technology (KACST), King Abdullah University of Science and Technology (KAUST), and UCSB; National Science Foundation (NSF) National Nanotechnology Infrastructure Network (NNIN) (ECS-0335765); NSF Materials Research Science and Engineering Centers (MRSEC) Program (DMR-1720256).
PublisherThe Optical Society