Zinc oxide clad limited area epitaxy semipolar III-nitride laser diodes
Type
ArticleAuthors
Myzaferi, A.
Mughal, Asad J.
Cohen, Daniel A.
Farrell, Robert M.
Nakamura, Shuji
Speck, James S.
DenBaars, Steven P.
Date
2018-05-01Online Publication Date
2018-05-01Print Publication Date
2018-05-14Permanent link to this record
http://hdl.handle.net/10754/629768
Metadata
Show full item recordAbstract
We report continuous-wave (CW) blue semipolar (202̲1) III-nitride laser diodes (LDs) that incorporate limited area epitaxy (LAE) n-AlGaN bottom cladding with thin p-GaN and ZnO top cladding layers. LAE mitigates LD design limitations that arise from stress relaxation, while ZnO layers reduce epitaxial growth time and temperature. Numerical modeling indicates that ZnO reduces the internal loss and increases the differential efficiency of TCO clad LDs. Room temperature CW lasing was achieved at 445 nm for a ridge waveguide LD with a threshold current density of 10.4 kA/cm2, a threshold voltage of 5.8 V, and a differential resistance of 1.1 Ω.Citation
Myzaferi A, Mughal AJ, Cohen DA, Farrell RM, Nakamura S, et al. (2018) Zinc oxide clad limited area epitaxy semipolar III-nitride laser diodes. Optics Express 26: 12490. Available: http://dx.doi.org/10.1364/oe.26.012490.Sponsors
Solid State Lighting and Energy Electronics Center (SSLEEC) at the University of California Santa Barbara (UCSB); Solid State Lighting Program (SSLP), a collaboration between King Abdulaziz City for Science and Technology (KACST), King Abdullah University of Science and Technology (KAUST), and UCSB; National Science Foundation (NSF) National Nanotechnology Infrastructure Network (NNIN) (ECS-0335765); NSF Materials Research Science and Engineering Centers (MRSEC) Program (DMR-1720256).Publisher
The Optical SocietyJournal
Optics Expressae974a485f413a2113503eed53cd6c53
10.1364/oe.26.012490