Reduced-droop green III–nitride light-emitting diodes utilizing GaN tunnel junction
AuthorsAlhassan, Abdullah I.
Young, Erin C.
Alyamani, Ahmed Y.
DenBaars, Steven P.
Speck, James S.
Online Publication Date2018-03-01
Print Publication Date2018-04-01
Permanent link to this recordhttp://hdl.handle.net/10754/629750
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AbstractWe report the fabrication of low-droop high-efficiency green c-plane light-emitting diodes (LEDs) utilizing GaN tunnel junction (TJ) contacts. The LED epitaxial layers with a top p-GaN layer were grown by metal organic chemical vapor deposition and an n++-GaN layer was deposited by molecular beam epitaxy to form a TJ. The TJ LEDs were then compared with equivalent LEDs having a tin-doped indium oxide (ITO) contact. The TJ LEDs exhibited a higher performance and a lower efficiency droop than did the ITO LEDs. At 35 A/cm2, the external quantum efficiencies for the TJ and ITO LEDs were 31.2 and 27%, respectively.
CitationAlhassan AI, Young EC, Alyamani AY, Albadri A, Nakamura S, et al. (2018) Reduced-droop green III–nitride light-emitting diodes utilizing GaN tunnel junction. Applied Physics Express 11: 042101. Available: http://dx.doi.org/10.7567/apex.11.042101.
SponsorsThis work was funded by the King Abdulaziz City for Science and Technology (KACST) Technology Innovations Center (TIC) program and the KACST-KAUST-UCSB Solid State Lighting Program. Additional support was provided by the Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB. A portion of this work was carried out in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC program (DMR-1121053).
PublisherJapan Society of Applied Physics
JournalApplied Physics Express