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dc.contributor.authorAlaie, Seyedhamidreza
dc.contributor.authorGhasemi Baboly, Mohammadhosein
dc.contributor.authorJiang, Ying Bing
dc.contributor.authorRempe, Susan B.
dc.contributor.authorAnjum, Dalaver H.
dc.contributor.authorChaieb, Saharoui
dc.contributor.authorDonovan, Brian Francis
dc.contributor.authorGiri, Ashutosh
dc.contributor.authorSzwejkowski, Chester J
dc.contributor.authorGaskins, John Thomas
dc.contributor.authorElahi, Mirza
dc.contributor.authorGoettler, Drew
dc.contributor.authorBraun, Jeffrey L.
dc.contributor.authorHopkins, Patrick E.
dc.contributor.authorLeseman, Zayd Chad
dc.date.accessioned2018-10-09T13:12:01Z
dc.date.available2018-10-09T13:12:01Z
dc.date.issued2018-10-03
dc.identifier.citationAlaie S, Ghasemi Baboly M, Jiang YB, Rempe SB, Anjum DH, et al. (2018) Reduction and Increase in Thermal Conductivity of Si Irradiated with Ga+ via Focused Ion Beam. ACS Applied Materials & Interfaces. Available: http://dx.doi.org/10.1021/acsami.8b11949.
dc.identifier.issn1944-8244
dc.identifier.issn1944-8252
dc.identifier.doi10.1021/acsami.8b11949
dc.identifier.urihttp://hdl.handle.net/10754/628917
dc.description.abstractFocused Ion Beam (FIB) technology has become a valuable tool for the microelectronics industry and for the fabrication and preparation of samples at the micro/nanoscale. Its effects on the thermal transport properties of Si, however are not well understood, nor do experimental data exist. This paper presents a carefully designed set of experiments for the determination of the thermal conductivity of Si samples irradiated by Ga+ FIB. Generally, the thermal conductivity decreases with increasing ion dose. For doses of >1016 (Ga+/cm2), a reversal of the trend was observed due to recrystallization of Si. This report provides insight on the thermal transport considerations relevant to engineering of Si nanostructures and interfaces fabricated or prepared by FIB.
dc.description.sponsorshipSA, MGB, DFG and ZCL acknowledge support from the National Science Foundation Division of CMMI under Award 1056077. Materials supplied by PEH et al. are based upon work partially supported by the Air Force Office of Scientific Research under award number FA9550-18-1-0352. PEH is also appreciative for support from the National Science Foundation, Grant No. CBET-1706388.
dc.publisherAmerican Chemical Society (ACS)
dc.relation.urlhttps://pubs.acs.org/doi/10.1021/acsami.8b11949
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsami.8b11949.
dc.subjectFocused Ion Beam (FIB)
dc.subjectThermal Conductivity
dc.subjectGallium
dc.subjectIrradiated
dc.subjectNanostructures
dc.subjectTime Domain Thermo-Reflectance (TDTR)
dc.titleReduction and Increase in Thermal Conductivity of Si Irradiated with Ga+ via Focused Ion Beam
dc.typeArticle
dc.contributor.departmentBiological and Environmental Sciences and Engineering (BESE) Division
dc.contributor.departmentBioscience Program
dc.contributor.departmentElectron Microscopy
dc.contributor.departmentNanofabrication Core Lab
dc.contributor.departmentOffice of the VP
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalACS Applied Materials & Interfaces
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Radiology, Weill Cornell Medicine, Cornell University New York, NY, 10065, USA.
dc.contributor.institutionDepartment of Engineering, University of Jamestown, Jamestown, ND, 58405, USA.
dc.contributor.institutionDepartment of Chemical and Biological Engineering, University of New Mexico, Albuquerque, NM, 87131, USA.
dc.contributor.institutionSandia National Laboratories, Albuquerque, NM 87123, USA.
dc.contributor.institutionMaterials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
dc.contributor.institutionLawrence Berkeley National Laboratory, Berkeley, CA, 94720 USA
dc.contributor.institutionDepartment of Physics, United States Naval Academy, Annapolis, 21402, MD, USA.
dc.contributor.institutionDepartment of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, 22904 VA, USA.
dc.contributor.institutionDepartment of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM, 87131, USA.
dc.contributor.institutionDepartment of Mechanical Engineering, University of New Mexico, Albuquerque, NM, 87131, USA.
dc.contributor.institutionDepartment of Physics, University of Virginia, Charlottesville, 22904 VA, USA.
dc.contributor.institutionDepartment of Materials Science and Engineering, University of Virginia, Charlottesville, 22904 VA, USA.
dc.contributor.institutionDepartment of Mechanical and Nuclear Engineering, Kansas State University, Manhattan, KS, 66506, USA.
kaust.personAnjum, Dalaver H.
kaust.personChaieb, Sahraoui
refterms.dateFOA2018-10-09T13:24:20Z
dc.date.published-online2018-10-03
dc.date.published-print2018-10-31


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